IRL530NSTRL

P1-P3 P4-P6 P7-P9 P10-P11

IRL530NS/L

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D =

P. W .

Period

+

-

+

+

+

-

-

-

Fig 14. For N-Channel HEXFETS

* V

GS

= 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







R

G

V

DD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



*

IRL530NS/L

D

2

Pak Part Marking Information

For GB Production

D

2

Pak Package Outline

IRL530NS/L

TO-262 Package Outline

TO-262 Part Marking Information

IGBT

1- GATE

2- COLLEC-

TOR

P1-P3 P4-P6 P7-P9 P10-P11

IRL530NSTRL

Mfr. #:

Buy IRL530NSTRL

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 17A D2PAK

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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