PMEG3010EB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 15 March 2012 2 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering point of cathode tab.
Table 3. Ordering information
Type number Package
Name Description Version
PMEG3010EB - plastic surface-mounted package; 2 leads SOD523
Table 4. Marking codes
Type number Marking code
PMEG3010EB KA
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current T
sp
≤ 55 °C - 1 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ≤0.25 - 3 A
I
FSM
non-repetitive peak forward
current
t
p
=8ms; T
j(init)
= 25 °C; square wave - 5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 310 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][2]
- - 400 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[3]
--75K/W
