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PMEG3010EB,115

P1-P3P4-P6P7-P9P10-P10
PMEG3010EB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 15 March 2012 3 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 mA; pulsed; t
p
≤ 300 µs;
δ≤0.02 ; T
amb
=25°C
- 90 180 mV
I
F
= 1 mA; pulsed; t
p
≤ 300 µs;
δ≤0.02 ; T
amb
=25°C
- 150 200 mV
I
F
= 10 mA; pulsed; t
p
≤ 300 µs;
δ≤0.02 ; T
amb
=25°C
- 210 270 mV
I
F
= 100 mA; pulsed; t
p
≤ 300 µs;
δ≤0.02 ; T
amb
=25°C
- 295 360 mV
I
F
= 500 mA; pulsed; t
p
≤ 300 µs;
δ≤0.02 ; T
amb
=25°C
- 430 500 mV
I
F
= 1 A; pulsed; t
p
≤ 300 µs; δ≤0.02 ;
T
amb
=25°C
- 610 680 mV
I
R
reverse current V
R
=10V; T
amb
= 25 °C - 15 200 µA
V
R
=30V; T
amb
= 25 °C - 70 500 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C - 24 30 pF
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 85 °C
(4) T
amb
= 25 °C
(5) T
amb
= −40 °C
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 85 °C
(4) T
amb
= 25 °C
(5) T
amb
= −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa855
10
1
10
3
10
2
10
4
I
F
(mA)
10
−1
V
F
(V)
0 1.41.20.4 0.8 1.00.2 0.6
(1)
(2)
(3)
(4)
(5)
006aaa856
I
R
(μA)
1
10
−2
10
−1
10
4
10
3
10
2
10
10
5
10
−3
V
R
(V)
0302551510 20
(1)
(2)
(3)
(4)
(5)
PMEG3010EB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 15 March 2012 4 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f = 1 MHz; T
amb
= 25 °C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
Fig 4. Duty cycle definition
t
p
t
cy
P
t
006aac658
duty cycle δ =
t
p
t
cy
PMEG3010EB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 15 March 2012 5 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
9. Package outline
10. Soldering
Fig 5. Package outline SOD523
02-12-13Dimensions in mm
1.65
1.55
1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
Fig 6. Reflow soldering footprint for SOD523
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_fr
P1-P3P4-P6P7-P9P10-P10

PMEG3010EB,115

Mfr. #:
Buy PMEG3010EB,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHTTKY TAPE-7
Lifecycle:
New from this manufacturer.
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