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IRF7317PBF

P1-P3P4-P6P7-P9P10-P10
N-Ch P-Ch
V
DSS
20V -20V
R
DS(on)
0.029Ω 0.058Ω
N-Channel P-Channel
Drain-Source Voltage V
DS
20 -20
Gate-Source Voltage V
GS
± 12
T
A
= 25°C 6.6 -5.3
T
A
= 70°C 5.3 -4.3
Pulsed Drain Current I
DM
26 -21
Continuous Source Current (Diode Conduction) I
S
2.5 -2.5
T
A
= 25°C 2.0
T
A
= 70°C 1. 3
Single Pulse Avalanche Energy E
AS
100 150 mJ
Avalanche Current I
AR
4.1 -2.9 A
Repetitive Avalanche Energy E
AR
0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range T
J,
T
STG
-55 to + 150 °C
HEXFET
®
Power MOSFET
PD - 95296
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
5/25/04
SO-8
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
IRF7317PbF
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
W
Symbol Maximum Units
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
l Lead-Free
IRF7317PbF
Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 V
GS
= 0V, I
D
= 250µA
P-Ch -20 V
GS
= 0V, I
D
= -250µA
N-Ch 0.027 Reference to 25°C, I
D
= 1mA
P-Ch 0.031 Reference to 25°C, I
D
= -1mA
0.023 0.029 V
GS
= 4.5V, I
D
= 6.0A
0.030 0.046 V
GS
= 2.7V, I
D
= 5.2A
0.049 0.058 V
GS
= -4.5V, I
D
= -2.9A
0.082 0.098 V
GS
= -2.7V, I
D
= -1.5A
N-Ch 0.7 V
DS
= V
GS
, I
D
= 250µA
P-Ch -0.7 V
DS
= V
GS
, I
D
= -250µA
N-Ch 20 V
DS
= 10V, I
D
= 6.0A
P-Ch 5.9 V
DS
= -10V, I
D
= -1.5A
N-Ch 1.0 V
DS
= 16V, V
GS
= 0V
P-Ch -1.0 V
DS
= -16V, V
GS
= 0V
N-Ch 5.0 V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
P-Ch -25 V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
I
GSS
Gate-to-Source Forward Leakage N-P ±100 V
GS
= ±12V
N-Ch 18 27
P-Ch 19 29
N-Ch 2.2 3.3
P-Ch 4.0 6.1
N-Ch 6.2 9.3
P-Ch 7.7 12
N-Ch 8.1 12
P-Ch 15 22
N-Ch 17 25
P-Ch 40 60
N-Ch 38 57
P-Ch 42 63
N-Ch 31 47
P-Ch 49 73
N-Ch 900
P-Ch 780
N-Ch 430 pF
P-Ch 470
N-Ch 200
P-Ch 240
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
I
D
= 6.0A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
P-Channel
V
DD
= -10V, I
D
= -2.9A, R
G
= 6.0Ω,
R
D
= 3.4Ω
N-Channel
V
GS
= 0V, V
DS
= 15V,  = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V,  = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch 2.5
P-Ch -2.5
N-Ch 26
P-Ch -21
N-Ch 0.72 1.0 T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
P-Ch -0.78 -1.0 T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
N-Ch 52 77
P-Ch 47 71
N-Ch 58 86
P-Ch 49 73
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
=1.7A, di/dt = 100A/µs
P-Channel
T
J
= 25°C, I
F
= -2.9A, di/dt = 100A/µs
N-Channel I
SD
≤ 4.1A, di/dt ≤ 92A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -2.9A, di/dt ≤ -77A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel Starting T
J
= 25°C, L = 12mH R
G
= 25Ω, I
AS
= 4.1A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 35mH R
G
= 25Ω, I
AS
= -2.9A.
nA
IRF7317PbF
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0
V = 10V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
P1-P3P4-P6P7-P9P10-P10

IRF7317PBF

Mfr. #:
Buy IRF7317PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V DUAL N / P CH 12V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
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