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IRF7317PBF

P1-P3P4-P6P7-P9P10-P10
IRF7317PbF
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
R
DS
(on) , Drain-to-Source On Resistance (Ω)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.0A
0.01
0.02
0.03
0.04
0.05
02468
A
GS
V , Gate-to-Source Voltage (V)
I = 6.6A
D
0.020
0.024
0.028
0.032
0 102030
A
I , Drain Current (A)
D
V = 4.5V
GS
V = 2.7V
GS
IRF7317PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
400
800
1200
1600
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
6.0A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7317PbF
Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
P1-P3P4-P6P7-P9P10-P10

IRF7317PBF

Mfr. #:
Buy IRF7317PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V DUAL N / P CH 12V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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