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NTB30N06T4

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1 Publication Order Number:
NTP30N06/D
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"20
"30
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
27
15
80
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
88.2
0.59
W
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 26 A, V
DS
= 60 Vdc)
E
AS
101 mJ
Thermal Resistance, Junction−to−Case
R
q
JC
1.7 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
30 AMPERES, 60 VOLTS
R
DS(on)
= 42 mW
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
N−Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
NTx30N06 = Device Code
x = B or P
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTx30N06G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx
30N06G
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
http://onsemi.com
NTP30N06, NTB30N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
71.1
70
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
3.05
7.3
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 1)
(V
GS
= 10 Vdc, I
D
= 15 Adc)
R
DS(on)
− 35 42
mW
Static Drain−to−Source On−Voltage (Note 1)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
(V
GS
= 10 Vdc, I
D
= 15 Adc, T
J
= 150°C)
V
DS(on)
−
−
1.1
0.98
1.5
−
Vdc
Forward Transconductance (Note 1) (V
DS
= 7.0 Vdc, I
D
= 15 Adc) g
FS
− 16 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 850 1200 pF
Output Capacitance
C
oss
− 250 350
Transfer Capacitance C
rss
− 68 100
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 W) (Note 1)
t
d(on)
− 11 25 ns
Rise Time t
r
− 36 80
Turn−Off Delay Time t
d(off)
− 24 50
Fall Time t
f
− 31 60
Gate Charge
(V
DS
= 48 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc) (Note 1)
Q
T
− 23.4 46 nC
Q
1
− 5.1 −
Q
2
− 11 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 30 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
1.03
1.05
1.15
−
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 1)
t
rr
− 52 −
ns
t
a
− 38 −
t
b
− 15 −
Reverse Recovery Stored Charge Q
RR
− 0.094 −
mC
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
NTP30N06, NTB30N06
http://onsemi.com
3
0
0.09
0.06
3020
0
10 6
0
0.04
0.02
40 50
0.08
0.03
0.05
0.07
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 15 V
60
30
20
10
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS) I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
2.2
1.8
1.4
1.6
1.2
1
0.6
1
1000
10000
0321
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0
0.09
0.06
3020
0
10 60
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
60
−50 50250−25 75 125100
21
0
4
030402010 50 60
40
30
20
10
0
6
175150
0.8
45 6
9 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 15 A
V
GS
= 10 V
V
GS
= 10 V
7 V
8
0.04
0.02
10
6.5 V
6 V
5.5 V
4.5 V
40
50 50
40 50
0.08
5 V
8 V
0.03
0.05
0.07
2
100
P1-P3P4-P6P7-P7

NTB30N06T4

Mfr. #:
Buy NTB30N06T4
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 27A D2PAK
Lifecycle:
New from this manufacturer.
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