NTP30N06, NTB30N06
http://onsemi.com
4
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS) T
J
, STARTING JUNCTION TEMPERATURE (°C)
D
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
100
1
0.1
1000
100
1
12
10
8
6
4
2
0
120
60
20
40
0
32
16
0
10
2400
10
1200
155020
800
400
0
5
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
25 0 84
1 10 100 0.6 0.760.68 0.92 1.1
0.1 10 1001 25 125 15010075 17
50
0.84
10
24
1
I
D
= 30 A
T
J
= 25°C
V
GS
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DS
= 30 V
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25°C
I
D
= 26 A
t
f
t
d(off)
t
d(on)
t
r
R
DS(on)
Limit
Q
T
Q
2
Q
1
10 ms
1 ms
100 ms
dc
V
GS
V
DS
Thermal Limit
Package Limit
8
10 ms
1600
2000
12 16
24
10
80
100
20
1.08
