NX3L4684 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 8 — 3 April 2014 15 of 24
NXP Semiconductors
NX3L4684
Low-ohmic dual single-pole double-throw analog switch
12.2 Additional dynamic characteristics
[1] f
i
is biased at 0.5V
CC
.
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
2.5 ns.
Symbol Parameter Conditions T
amb
= 25 C Unit
Min Typ Max
THD total harmonic
distortion
f
i
=20Hzto20 kHz; R
L
=32; see Figure 25
[1]
V
CC
=1.4V; V
I
= 1 V (p-p) - 0.06 - %
V
CC
=1.65V; V
I
= 1.2 V (p-p) - 0.02 - %
V
CC
=2.3V; V
I
= 1.5 V (p-p) - 0.02 - %
V
CC
=2.7V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=4.3V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=3.0V; V
I
= 1 V (p-p); R
L
= 600 -0.01- %
f
(3dB)
3 dB frequency
response
R
L
=50; see Figure 26
[1]
port nY0; V
CC
= 1.4 V to 4.3 V - 15 - MHz
port nY1; V
CC
= 1.4 V to 4.3 V - 20 - MHz
iso
isolation (OFF-state) f
i
= 100 kHz; R
L
=50; see Figure 27
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
V
ct
crosstalk voltage between digital inputs and switch;
f
i
= 1 MHz; C
L
= 50 pF; R
L
=50; see Figure 28
V
CC
= 1.4 V to 3.6 V - 0.5 - V
V
CC
= 3.6 V to 4.3 V - 0.7 - V
Xtalk crosstalk between switches;
f
i
= 100 kHz; R
L
=50;seeFigure 29
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
Q
inj
charge injection f
i
= 1 MHz; C
L
= 0.1 nF; R
L
=1 M; V
gen
=0V;
R
gen
=0; see Figure 30
V
CC
= 1.5 V - 10 - pC
V
CC
= 1.8 V - 14 - pC
V
CC
=2.5V - 21 - pC
V
CC
=3.3V - 30 - pC
V
CC
=4.3V - 50 - pC