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ARCHIVE INFORMATION
MMG3010NT1
1
RF Device Data
Freescale Semiconductor
MMG3010NT1
0-6000 MHz, 15 dB
17 dBm
InGaP HBT
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small-signal RF.
Features
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1514-02, STYLE 1
SOT-89
PLASTIC
1
2
3
Table 1. Typical Performance
(1)
Characteristic Symbol 900
MHz
2140
MHz
3500
MHz
Unit
Small -Signal Gain
(S21)
G
p
15 14 12 dB
Input Return Loss
(S11)
IRL -15 -17 -22 dB
Output Return Loss
(S22)
ORL -25 -25 -15 dB
Power Output @1dB
Compression
P1db 17 16.5 15.5 dBm
Third Order Output
Intercept Point
IP3 31 30 28 dBm
1. V
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
7 V
Supply Current I
CC
300 mA
RF Input Power P
in
10 dBm
Storage Temperature Range T
stg
-65 to +150 °C
Junction Temperature
(2)
T
J
150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V
CC
= 5 Vdc, I
CC
= 54 mA, T
C
= 25°C)
Characteristic Symbol Value
(3)
Unit
Thermal Resistance, Junction to Case R
θ
JC
83 °C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3010NT1
Rev. 5, 3/2008
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2005 -2009. All rights reserved.
