AR
HIVE INF
RMATI
N
ARCHIVE INFORMATION
MMG3010NT1
5
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
21
36
4.9
V
CC
, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
33
30
27
24
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
4.95 5 5.15.05
f = 900 MHz
1 MHz Tone Spacing
100−40 −20 0 20 40 60 80
26
33
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
31
30
29
28
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
27
Figure 10. Third Order Intermodulation versus
Output Power
P
out
, OUTPUT POWER (dBm)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−3 0 3
6
9
−80
−30
−50
−60
−70
V
CC
= 5 Vdc
I
CC
= 54 mA
f = 900 MHz
1 MHz Tone Spacing
−40
150
10
3
10
5
120
Figure 11. MTTF versus Junction Temperature
10
4
125 130 135 140 145
T
J
, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 54 mA
MTTF (YEARS)
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
V
CC
= 5 Vdc
I
CC
= 54 mA
6
4
2
123
NF, NOISE FIGURE (dB)
−70
−20
−3
P
out
, OUTPUT POWER (dBm)
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
−30
−40
−50
−60
960
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
15
32
3
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
V
CC
= 5 Vdc, I
CC
= 54 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
1512
12
