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STB55NF06LT4

P1-P3P4-P6P7-P9P10-P12P13-P15
November 2006 Rev 4 1/15
15
STP55NF06L
STB55NF06L - STB55NF06L-1
N-channel 60V - 0.014Ω - 55A TO-220/D
2
PAK/I
2
PA K
STripFET™ II Power MOSFET
General features
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP55NF06L 60V <0.018Ω 55A
STB55NF06L 60V <0.018Ω 55A
STB55NF06L-1 60V <0.018Ω 55A
TO-220
D
2
PAK
I
2
PAK
1
3
1
2
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STP55NF06L P55NF06L TO-220 Tube
STB55NF06LT4 B55NF06L D
2
PAK Tape & reel
STB55NF06L-1 B55NF06L I
2
PA K Tu b e
Contents STB55NF06L - STB55NF06L-1 - STP55NF06L
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB55NF06L - STB55NF06L-1 - STP55NF06L Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 60 V
V
GS
Gate-source voltage ± 16 V
I
D
Drain current (continuous) at T
C
= 25°C 55 A
I
D
Drain current (continuous) at T
C
= 100°C 39 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 220 A
P
TOT
Total dissipation at T
C
= 25°C 95 W
Derating factor 0.63 W/°C
dv/dt
(2)
2. I
SD
≤ 55A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
.
Peak diode recovery voltage slope 20 V/ns
E
AS
(3)
3. Starting T
j
= 25
o
C, I
D
= 27.5A, V
DD
= 30V
.
Single pulse avalanche energy 300 mJ
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal data
R
thj-case
Thermal resistance junction-case max 1.58 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15

STB55NF06LT4

Mfr. #:
Buy STB55NF06LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 55 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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