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STB55NF06LT4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
Electrical ch
aracteristics
STB55NF06L - STB55NF06L-
1 - STP55NF06L
4/15
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
On/off states
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
60
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16V
±
100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
11
.
7
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 5V
, I
D
= 27.5A
V
GS
= 10V
, I
D
= 27.5A
0.016
0.014
0.020
0.018
Ω
Ω
T
able 4.
Dynamic
Symbol
Pa
rameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward transconductance
V
DS
=15V
, I
D
= 27.5A
30
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Re
vers
e transf
er
capacitance
V
DS
=25V
, f=1 MHz,
V
GS
=0
1700
300
105
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate
charge
Gate-source charge
Gate-drain charge
V
DD
=48V
, I
D
= 55A
V
GS
=4.5V
27
7
10
37
nC
nC
nC
STB55NF06L - STB5
5NF06L-1 - STP55NF06L
Electrical
characteristics
5/15
T
able 5.
Switching times
Symbol
P
arameter
T
est cond
iti
ons
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
ur
n-on dela
y time
Rise time
V
DD
=30 V
, I
D
=27.5A,
R
G
=4.7
Ω,
V
GS
= 4.5V
(see Figure 12)
20
100
ns
ns
t
d(off)
t
f
T
ur
n-off dela
y time
F
all time
V
DD
=30V
, I
D
=27.5A,
R
G
=4.7
Ω,
V
GS
=4.5V
(see Figure 12)
40
20
ns
ns
T
able 6.
Source drain diode
Symbol
P
arameter
T
est conditions
Min
T
yp.
Max
Unit
I
SD
Source-drain current
12
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
48
A
V
SD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 55A, V
GS
=0
1.6
V
t
rr
Q
rr
I
RRM
Re
verse reco
very time
Rev
erse recov
ery ch
arge
Re
verse reco
very current
I
SD
= 55A,
di/dt = 100A/µs,
V
DD
= 30V
, Tj = 15
0°C
(see Figure 14)
80
200
5
ns
nC
A
Electrical ch
aracteristics
STB55NF06L - STB55NF06L-
1 - STP55NF06L
6/15
2.1 Electrical
characterist
ics (curves)
Figure 1.
Safe operat
ing area
Figure 2.
Thermal impedance
Figure 3.
Output characterisi
cs
Figure 4.
T
rans
fer characteristics
Figure 5.
T
ransconductance
Figure 6.
Static drain-sou
rce on resis
tance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
STB55NF06LT4
Mfr. #:
Buy STB55NF06LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 55 Amp
Lifecycle:
New from this manufacturer.
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Products related to this Datasheet
STB55NF06LT4
STP55NF06L