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IXTN200N10L2

P1-P3P4-P5
© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 100 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 100 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 178 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
500 A
I
A
T
C
= 25°C 100 A
E
AS
T
C
= 25°C 5 J
P
D
T
C
= 25°C 830 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
V
ISOL
50/60 Hz, RMS t = 1 Minute 2500 V~
I
ISOL
≤ 1mA t = 1 Second 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 3mA 2.0 4.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
,
V
GS
= 0V 10 μA
T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 100A, Note 1 11 mΩ
Linear L2
TM
Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
IXTN200N10L2
V
DSS
= 100V
I
D25
= 178A
R
DS(on)
≤≤
≤≤
≤ 11m
ΩΩ
ΩΩ
Ω
DS100238(2/10)
Features
• MiniBLOC with Aluminium Nitride
Isolation
• Designed for Linear Operation
• International Standard Package
Guaranteed FBSOA at 75°C
• Avalanche Rated
• Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Programmable Loads
• Current Regulators
• DC-DC Converters
• Battery Chargers
• DC Choppers
• Temperature and Lighting Controls
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN200N10L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 73 90 S
C
iss
23 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 3200 pF
C
rss
610 pF
t
d(on)
40 ns
t
r
225 ns
t
d(off)
127 ns
t
f
27 ns
Q
g(on)
540 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A 115 nC
Q
gd
226 nC
R
thJC
0.15 °C/W
R
thCS
0.05 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 100V, I
D
= 5A, T
C
= 75°C , tp = 5s 500 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 A
I
SM
Repetitive, Pulse Width Limited by T
JM
800 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
245 ns
I
RM
24.4 A
Q
RM
3.0 μC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 1Ω (External)
I
F
= 100A, -di/dt = 100A/μs
V
R
=
50V, V
GS
= 0V
© 2010 IXYS CORPORATION, All Rights Reserved
IXTN200N10L2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
7
V
8
V
6
V
4
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
6
V
8
V
7
V
12
V
10
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
4
V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50-250 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200A
I
D
= 100A
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value vs.
Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
20V
- - - -
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTN200N10L2

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Description:
MOSFET N-CH 100V 178A SOT-227
Lifecycle:
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