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IXTN200N10L2

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN200N10L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
280
320
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 100A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2010 IXYS CORPORATION, All Rights Reserved
IXTN200N10L2
IXYS REF: T_200N10L2(9R)1-26-10
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
100ms
10ms
DC
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
P1-P3P4-P5

IXTN200N10L2

Mfr. #:
Buy IXTN200N10L2
Manufacturer:
Description:
MOSFET N-CH 100V 178A SOT-227
Lifecycle:
New from this manufacturer.
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