PMF370XN_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 20 June 2008 5 of 12
NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
R
DSon
drain-source on-state
resistance
V
GS
=2.5V; I
D
=0.1A;
T
j
=25°C; see Figure 9 and 10
- 550 650 mΩ
V
GS
=4.5V; I
D
=0.2A;
T
j
= 150 °C; see Figure 10
- 629 748 mΩ
V
GS
=4.5V; I
D
=0.2A;
T
j
=25°C; see Figure 9 and 10
- 370 440 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=1A; V
DS
=15V;
V
GS
=4.5V; T
j
=25°C;
see Figure 11
and 12
-0.65-nC
Q
GS
gate-source charge - 0.14 - nC
Q
GD
gate-drain charge - 0.18 - nC
C
iss
input capacitance V
DS
=25V; V
GS
=0V;
f=1MHz; T
j
=25°C;
see Figure 13
-37-pF
C
oss
output capacitance - 8.5 - pF
C
rss
reverse transfer
capacitance
-5.5-pF
t
d(on)
turn-on delay time R
G(ext)
=6Ω; R
L
=15Ω;
V
DS
=15V; V
GS
=4.5V;
T
j
=25°C
-6.5-ns
t
r
rise time - 9.5 - ns
t
d(off)
turn-off delay time - 14 - ns
t
f
fall time - 5.5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 0.3 A; V
GS
=0V; T
j
=25°C;
see Figure 14
-0.811.2V
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
V
DS
(V)
021.50.5 1
03ao00
1
1.5
0.5
2
2.5
I
D
(A)
0
3
2.5
1.8
3.5
2
V
GS
(V) = 4.5
V
GS
(V)
054231
1
1.5
0.5
2
2.5
I
D
(X)
0
25 °C
Tj = 150 °C
T
j
=25°C
T
j
=25°C and 150°C;V
DS
> I
D
× R
DSon
