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PMF370XN,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PMF370XN_3
© NXP B.V
. 200
8. All rights reserv
ed.
Product data sheet
Rev
. 03 — 20 June 2008
6 of 12
NXP Semiconductors
PMF370XN
N-channel T
renchMOS extremely low level FET
Fig 7.
Gate-sourc
e threshold vo
lt
age as a function of
junction temperature
Fig 8.
Subthres
hold drain c
urrent as a
function of
gate-sour
ce volt
age
Fig 9.
Drain-sou
rce on-state resist
ance as a functio
n
of drain cu
rrent; typi
cal values
Fig 10.
Normalized drain-sourc
e on-state resist
ance
factor as a f
unction of junction te
mperature
T
j
(
°
C)
−
60
180
120
06
0
03al82
1
0.5
1.5
2
V
GS (th)
(V)
0
max
min
typ
03an65
10
−
4
10
−
5
10
−
3
I
D
(A)
10
−
6
V
GS
(V)
0
1.6
1.2
0.4
0.8
min
typ
max
I
D
=
0.25
A
;
V
DS
=
V
GS
T
j
=2
5
°C
;
V
DS
=5
V
I
D
(A)
0
2.5
2
1
1.5
0.5
03ao01
0.4
0.6
0.2
0.8
1
R
DSon
(
Ω
)
0
V
GS
(V)
=
2
.
5
3
3
.
5
4
.
5
T
j
(
°
C)
−
60
180
120
06
0
03al00
0.6
1.2
1.8
a
0
T
j
=2
5
°C
a
=
R
DS
o
n
R
DS
o
n
(
25
°C
)
PMF370XN_3
© NXP B.V
. 200
8. All rights reserv
ed.
Product data sheet
Rev
. 03 — 20 June 2008
7 of 12
NXP Semiconductors
PMF370XN
N-channel T
renchMOS extremely low level FET
Fig 1
1.
Gate charge waveform de
finitions
Fig
12.
Gate-source voltage as a function of gate
charge; typical values
Fig 1
3.
Input, output a
nd reverse transfer
capacit
ances
as a function of drain-source voltage; typical
values
Fig 14.
Source current as a function
of source-drain
voltage; typical values
003aaa50
8
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Q
G
(nC)
0
0.8
0.6
0.2
0.4
03ao05
2
3
1
4
5
V
GS
(V)
0
I
D
= 1 A
T
j
= 25
°
C
V
DS
= 15
V
I
D
=1
A
;
V
DS
=1
5
V
03ao04
V
DS
(V)
10
−
1
10
2
10
1
10
10
2
C
(pF)
1
C
iss
C
oss
C
rss
V
SD
(V)
01
0.8
0.4
0.6
0.2
03ao03
0.4
0.6
0.2
0.8
1
I
S
(A)
0
V
GS
=
0
V
150
°
CT
j
=
25
°
C
V
GS
=0
V
;
f
=1
MHz
T
j
=2
5
°C
and
150
°C
;
V
GS
=0
V
PMF370XN_3
© NXP B.V
. 200
8. All rights reserv
ed.
Product data sheet
Rev
. 03 — 20 June 2008
8 of 12
NXP Semiconductors
PMF370XN
N-channel T
renchMOS extremely low level FET
7.
Package outline
Fig 15.
Package outline SOT
323 (SC-70)
UNIT
A
1
max
b
p
cD
E
e
1
H
E
L
p
Qw
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
b
p
D
e
1
e
A
B
A
1
L
p
Q
detail X
c
H
E
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads
SOT323
04-11-04
06-03-16
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PMF370XN,115
Mfr. #:
Buy PMF370XN,115
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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PMF370XN,115