1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 5 A
I
D
Drain current (continuous) at T
C
= 100 °C 3.2 A
I
DM
(1)
Drain current (pulsed) 20 A
I
D
(2)
Drain current (continuous) at T
pcb
= 25 °C 1.2 A
I
D
(2)
Drain current (continuous) at T
pcb
= 100 °C 0.8 A
I
DM
(1)(2)
Drain current (pulsed) 4.8 A
P
TOT
Total dissipation at T
C
= 25 °C 67 W
P
TOT
(2)
Total dissipation at T
pcb
= 25 °C 4 W
dv/dt
(3)
Peak diode recovery voltage slope 15 V/ns
dv/dt
(4)
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 10 s)
(3)
I
SD
≤ 5 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
(4)
V
DS
≤ 480 V
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.83 °C/W
R
thj-pcb
Thermal resistance junction-pcb max 31.3 °C/W
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
1 A
E
AS
Single pulse avalanche energy (starting T
j
= 25 °C,
I
D
= I
AR
; V
DD
= 50 V)
80 mJ
