STL7N60M2
DocID027417 Rev 1
7/13
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage
vs temperature
Figure 11: Normalized on-resistance vs
temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Normalized V(BR)DSS vs
temperature
C
100
10
1
0.1
(pF)
Ciss
Coss
Crss
1000
V
DS
(V)1001010.1
f = 1 Mhz
AM15818v1
2.0
1.0
0.5
1.5
2.5
0
E
OSS
(µJ)
V
DS
(V)
6005004003002001000
AM15819v1
V
GS(th)
(norm)
T
j
(°C)
I
D
= 250 µA
100500-50
0.9
0.8
0.7
0.6
1.0
1.1
AM15718v1
1.3
0.9
0.5
1.7
2.1
2.5
V
GS
= 10 V
T
j
(°C)
100500-50
R
DS(on)
(norm)
AM15821v1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
SD
(A)
V
SD
(V)
T
j
= -50°C
T
j
= 25°C
T
j
= 150°C
543210
AM15822v1
0.93
0.97
1.01
1.05
1.09
V
(BR)DSS
(norm)
T
j
(°C)
I
D
= 1mA
100500-50
AM15823v1
Test circuits
STL7N60M2
8/13
DocID027417 Rev 1
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
AM01469v1
V
DD
47 k Ω
1 kΩ
47 k Ω
2.7 k Ω
1 kΩ
12 V
V
i
V
GS
2200 μ F
P
W
I
G
= CONST
100 Ω
100 nF
D.U.T.
V
G
V
(BR)DS S
V
DD
V
DD
V
D
I
DM
I
D
AM01472v1
AM01473v1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
STL7N60M2
DocID027417 Rev 1
9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.

STL7N60M2

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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