1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ±25 V
I
D
Drain current (continuous) at T
case
= 25 °C 60
A
Drain current (continuous) at T
case
= 100 °C 38
I
DM
Drain current (pulsed) 240 A
P
TOT
Total dissipation at T
case
= 25 °C 446 W
dv/dt
Peak diode recovery voltage slope 50
V/ns
dv/dt
MOSFET dv/dt ruggedness 50
T
stg
Storage temperature
-55 to 150 °C
T
j
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 60 A, di/dt=800 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 520 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 0.28
°C/W
R
thj-amb
Thermal resistance junction-ambient 50
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive 8 A
E
AS
(1)
Single pulse avalanche energy 1100 mJ
Notes:
(1)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
