OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STW65N65DM2AG

P1-P3P4-P6P7-P9P10-P12
STW65N65DM2AG
Electrical characteristics
DocID028164 Rev 1
7/12
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits
STW65N65DM2AG
8/12
DocID028164 Rev 1
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STW65N65DM2AG
Package information
DocID028164 Rev 1
9/12
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 TO-247 package information
Figure 20: TO-247 package outline
0075325_H
P1-P3P4-P6P7-P9P10-P12

STW65N65DM2AG

Mfr. #:
Buy STW65N65DM2AG
Manufacturer:
STMicroelectronics
Description:
MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet