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NSVMMBT2907AM3T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2009
March, 2017 − Rev. 1
1 Publication Order Number:
MMBT2907AM3/D
MMBT2907AM3T5G
PNP General Purpose
Transistor
The MMBT2907AM3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SOT−723
CASE 631AA
STYLE 1
1
2
3
AC M
AC = Specific Device Code
M = Date Code
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MMBT2907AM3T5G SOT−723
(Pb−Free)
8000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NSVMMBT2907AM3T5G SOT−723
(Pb−Free)
8000/Tape &
Reel
MMBT2907AM3T5G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 Adc, I
E
= 0)
V
(BR)CBO
−60 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 Adc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
CEX
− −50
nAdc
Collector Cutoff Current
(V
CB
= −50 Vdc, I
E
= 0)
(V
CB
= −50 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
−0.010
−10
Adc
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
BL
− −50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= −500 mAdc, V
CE
= −10 Vdc) (Note 3)
h
FE
75
100
100
100
50
-
-
-
300
-
-
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc) (Note 3)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
-
-
-0.4
-1.6
Vdc
Base−Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
-
-
-1.3
-2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Notes 3, 4)
(I
C
= −50 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
200 −
MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0
pF
Input Capacitance
(V
EB
= −2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30
SWITCHING CHARACTERISTICS
Turn−On Time
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
I
B1
= −15 mAdc)
t
on
− 45
ns
Delay Time t
d
− 10
Rise Time t
r
− 40
Turn−Off Time
(V
CC
= −6.0 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= −15 mAdc)
(V
CC
= −6.0 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= −15 mAdc)
t
off
− 100
Storage Time t
s
− 80
Fall Time t
f
− 30
3. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MMBT2907AM3T5G
www.onsemi.com
3
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
P1-P3P4-P6

NSVMMBT2907AM3T5G

Mfr. #:
Buy NSVMMBT2907AM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP PNP TRANSISTOR
Lifecycle:
New from this manufacturer.
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