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NSVMMBT2907AM3T5G

P1-P3P4-P6
MMBT2907AM3T5G
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
-0.1
T
J
= 125°C
25°C
-55°C
V
CE
= -1.0 V
V
CE
= -10 V
h
FE
, NORMALIZED CURRENT GAIN
2.0
-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
I
C
= -1.0 mA
-0.005
-10 mA
-0.01
-100 mA
-500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0 -10 -20
-30
-50
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
I
C
, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
t
r
2.0 V
t
d
@ V
BE(off)
= 0 V
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
t
f
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
MMBT2907AM3T5G
www.onsemi.com
5
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= -50 A
-100 A
-500 A
-1.0 mA
R
s
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
I
C
= -1.0 mA, R
s
= 430
-500 A, R
s
= 560
-50 A, R
s
= 2.7 k
-100 A, R
s
= 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
Figure 11. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-1.0
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
R
VC
for V
CE(sat)
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
COEFFICIENT (mV/ ° C)
20
10
7.0
5.0
3.0
-0.2
-0.3
-0.5
-1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
C
eb
C
cb
V
CE
= -20 V
T
J
= 25°C
R
VB
for V
BE
MMBT2907AM3T5G
www.onsemi.com
6
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT−723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e
0.40 BSC
H 1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
1
2
3
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X
0.36
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MMBT2907AM3/D
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P1-P3P4-P6

NSVMMBT2907AM3T5G

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Buy NSVMMBT2907AM3T5G
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ON Semiconductor
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Bipolar Transistors - BJT SS GP PNP TRANSISTOR
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