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1 - 4
20080523a
IXKC 40N60C
IXYS reserves the right to change limits, test conditions and dimensions.
V
DSS
= 600 V
I
D25
= 28 A
R
DS(on) max
= 95 mΩ
CoolMOS
™ 1)
Power MOSFET
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C 600 V
V
GS
±
20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
28
19.2
A
A
E
AS
E
AR
single pulse; I
D
= 10 A; T
C
= 25°C
repetitive; I
D
= 20 A; T
C
= 25°C
690
1
mJ
mJ
D
G
S
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
DSon
, high V
DSS
MOSFET
Ultra low gate charge
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specifi ed)
min. typ. max.
R
DSon
V
GS
= 10 V; I
D
= 28 A 80 95
mΩ
V
GS(th)
V
DS
= V
GS
; I
D
= 2 mA 2.1 3.9 V
I
DSS
V
DS
= 600 V;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 150°C
50
500
µA
µA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V
200 nA
C
iss
C
oss
V
GS
= 0 V; V
DS
= 25 V
f = 1 MHz
4800
1560
pF
pF
Q
g
Q
gs
Q
gd
V
GS
= 0 to 10 V; V
DS
= 350 V; I
D
= 40 A
175
22
66
230 nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 13 V; V
DS
= 380 V
I
D
= 40 A; R
G
= 1.5 Ω; T
VJ
= 125°C
10
5
67
4.5
ns
ns
ns
ns
R
thJC
0.6 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• CoolMOS
™ 1)
power MOSFET
- 3rd generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1)
CoolMOS
™
is a trademark of
Infi neon Technologies AG.
ISOPLUS220
TM
G
D
S
isolated tab
q
E72873
