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IXKC40N60C

P1-P3P4-P4
© 2008 IXYS All rights reserved
4 - 4
20080523a
IXKC 40N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
R
DS(on)
[7]
I
D
[A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
20 V
35
V =
GS
T
J
= 150°C
0.2
0.3
0.4
0.5
0.6
0.7
R
DS(on)
[7]
T
J
[°C]
140
I
D
= 20 A
V
GS
= 10 V
I
D
[A]
140
V
GS
[V]
8
V
DS
> 2x I
D
x R
DS(on)max
20
40
60
80
100
120
160
I
F
[A]
V
SD
[V]
T
J
= 25°C typ.
T
J
= 150°C typ.
T
J
= 25°C (98%)
T
J
= 150°C (98%)
V
DS max
V
DS max
Q
G
[nC]
V
GS
[V]
14
I
D
= 40 A pulsed
40 80
120
160
200
240
280
V
DS
[V]
500
C [ pF ]
V
GS
= 0 V, f = 1 MHz
T
J
[°C]
140
E
AS
[mJ]
650
700
I
D
= 10 A
T
J
[°C]
140
V
(BR)DSS
[V]
700
I
D
= 0.5 mA
P1-P3P4-P4

IXKC40N60C

Mfr. #:
Buy IXKC40N60C
Manufacturer:
Littelfuse
Description:
MOSFET 28 Amps 600V 0.1 Rds
Lifecycle:
New from this manufacturer.
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