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TIP35C

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 6
1 Publication Order Number:
TIP35/D
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
Complementary Silicon
High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
• 25 A Collector Current
• Low Leakage Current −
I
CEO
= 1.0 mA @ 30 and 60 V
• Excellent DC Gain −
h
FE
= 40 Typ @ 15 A
• High Current Gain Bandwidth Product −
⎪h
fe
⎪ = 3.0 min @ I
C
= 1.0 A, f = 1.0 MHz
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
Collector − Emitter Voltage V
CEO
60 80 100 Vdc
Collector − Base Voltage V
CB
60 80 100 Vdc
Emitter − Base Voltage V
EB
5.0 Vdc
Collector Current
− Continuous
− Peak (Note 1)
I
C
25
40
Adc
Base Current − Continuous I
B
5.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
125
W
W/_C
Operating and Storage
Junction Temperature Range
T
J
, T
stg
−65 to +150
_C
Unclamped Inductive Load E
SB
90 mJ
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
1.0 °C/W
Junction−To −Free−Air
Thermal Resistance
R
q
JA
35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
2
MARKING DIAGRAMS
AYWWG
TIP3xx
TIP3xx
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
TIP3xx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
ORDERING INFORMATION
Device Package Shipping
TIP35AG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35BG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35CG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36AG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36BG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36CG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35AG TO−247
(Pb−Free)
30 Units / Rail
TIP35BG TO−247
(Pb−Free)
30 Units / Rail
TIP35CG TO−247
(Pb−Free)
30 Units / Rail
TIP36AG TO−247
(Pb−Free)
30 Units / Rail
TIP36BG TO−247
(Pb−Free)
30 Units / Rail
TIP36CG TO−247
(Pb−Free)
30 Units / Rail
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mA, I
B
= 0) TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
V
CEO(sus)
60
80
100
−
−
−
Vdc
Collector−Emitter Cutoff Current
(V
CE
= 30 V, I
B
= 0) TIP35A, TIP36A
(V
CE
= 60 V, I
B
= 0) TIP35B, TIP35C, TIP36B, TIP36C
I
CEO
−
−
1.0
1.0
mA
Collector−Emitter Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
I
CES
− 0.7 mA
Emitter−Base Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
− 1.0 mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 1.5 A, V
CE
= 4.0 V)
(I
C
= 15 A, V
CE
= 4.0 V)
h
FE
25
15
−
75
−
Collector−Emitter Saturation Voltage
(I
C
= 15 A, I
B
= 1.5 A)
(I
C
= 25 A, I
B
= 5.0 A)
V
CE(sat)
−
−
1.8
4.0
Vdc
Base−Emitter On Voltage
(I
C
= 15 A, V
CE
= 4.0 V)
(I
C
= 25 A, V
CE
= 4.0 V)
V
BE(on)
−
−
2.0
4.0
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.0 A, V
CE
= 10 V, f = 1.0 kHz)
h
fe
25 − −
Current−Gain — Bandwidth Product
(I
C
= 1.0 A, V
CE
= 10 V, f = 1.0 MHz)
f
T
3.0 − MHz
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
P1-P3P4-P6P7-P8

TIP35C

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Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Gen Pur Power
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