TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
4
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
0 125
0
25
175
75
100
75
100
50
125
25 150
P
D
, POWER DISSIPATION (WATTS)
50
Figure 2. Switching Time Equivalent Test Circuits
0.3
Figure 3. TurnOn Time
I
C
, COLLECTOR CURRENT (AMPERES)
0.02
1.0 30
0.07
1.0
10
T
J
= 25°C
I
C
/I
B
= 10
V
CC
= 30 V
V
BE(off)
= 2 V
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.5 3.0 5.0
0.03
0.7
2.0
0.7 7.0
t
r
0.2
2.0 20
t
d
(PNP)
(NPN)
TURNON TIME
TURNOFF TIME
+2.0 V
0
t
r
20 ns
-11.0 V
10 TO 100 mS
3.0R
L
-30 VV
CC
DUTY CYCLE 2.0%
10
R
B
TO SCOPE
t
r
20 ns
V
BB
+4.0 V
FOR CURVES OF FIGURES 3 & 4, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
0
+9.0 V
-11.0 V
10 to 100 ms
t
r
20 ns
DUTY CYCLE 2.0%
3.0R
L
-30 VV
CC
10
R
B
TO SCOPE
t
r
20 ns
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
5
0.5 1.0 2.0 7.00.3 3.0 5.00.7
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 4. TurnOff Time
10
t, TIME (s)μ
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20 30
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
t
s
t
f
(PNP)
(NPN)
t
s
t
f
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
Figure 5. DC Current Gain
200
500
0.2 0.5 2.0 1000.1
100
50
20
10
1.0
V
CE
= 4.0 V
T
J
= 25°C
5.0
10 205.0 50
PNP
NPN
1000
2.0
1.0
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
w 25_C. Second breakdown limitations do
not derate the same as thermal limitations.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during
reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0 201.0 50 100
0.2
0
0.5
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
1.0ms
dc
300ms
2.0
1.0
100
30
I
C
, COLLECTOR CURRENT (AMPS)
10ms
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
50
20
10
5.0
0.3
2.0 3.0 5.0 10 30 70
T
C
= 25°C
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40 600 80 100
5.0
0
15
20
40
30
I
C
, COLLECTOR CURRENT (AMPS)
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
25
10
10 20 30 50 70 90
T
J
100°C
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
6
Figure 8. Inductive Load Switching
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTES:
A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C2688, or equivalent.
B. Input pulse width is increased until I
CM
= 3.0 A.
C. For NPN, reverse all polarities.
INPUT
50
MJE180
R
BB1
20
R
BB2
= 100
V
BB2
= 0
V
BB1
= 10 V
V
CE
MONITOR
L1
(SEE NOTE A)
L2
(SEE NOTE A)
TUT
V
CC
= 10 V
I
C
MONITOR
+
-
R
S
= 0.1 W
50
+
-
5.0 V
0
-3.0 A
-10 V
t
w
= 6.0 ms
(SEE NOTE B)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
V
(BR)CER
0
0
100 ms

TIP35C

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Gen Pur Power
Lifecycle:
New from this manufacturer.
Delivery:
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