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BUK9213-30A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BUK9213-30A
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
7 of 13
NXP Semiconductors
BUK9213-30A
N-channel T
renchMOS logic level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source threshold voltage as a func
tion of
junction tempe
rature
Fig 11.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 12.
Normalized drain-sou
rce on-state resistance
factor as a function of junction temperature
03nj71
0
25
50
75
100
01
23
45
V
GS
(V)
I
D
(A
)
T
j
= 175
°
C
T
j
= 25
°
C
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03nj74
5
10
15
20
25
30
0
100
200
300
I
D
(A)
R
DSon
(m
Ω
)
label is
V
GS
(V)
3
3.2
3.4
3.6
3.8
4
5
10
03aa27
0
0.
5
1
1.
5
2
−
60
0
60
120
180
T
j
(
°
C)
a
BUK9213-30A
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
8 of 13
NXP Semiconductors
BUK9213-30A
N-channel T
renchMOS logic level FET
Fig 13.
Gate-source voltage as a fun
ction of turn-on
gate charge; typical values
Fig 14.
Input and reverse tran
sfer capacitances as a
function of drain
-source voltage; typical v
alues
Fig 15.
Reverse diode current
as a function of reverse diod
e voltage; typical values
03nj69
0
1
2
3
4
5
0
1
02
0
3
04
0
Q
G
(n
C
)
V
GS
(V
)
V
DD
= 14 V
V
DD
= 24 V
03nj75
0
1250
2500
3750
5000
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nj68
0
25
50
75
100
0.0
0.5
1.0
1.5
V
SD
(V
)
I
S
(A
)
T
j
= 175
°
C
T
j
= 25
°
C
BUK9213-30A
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
9 of 13
NXP Semiconductors
BUK9213-30A
N-channel T
renchMOS logic level FET
7.
Package outline
Fig 16.
Package ou
tline SOT428 (DPAK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
SC-63
TO-252
SOT428
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E
1
D
2
D
1
H
D
L
L
1
L
2
e
1
e
mounting
base
wA
M
b
E
b
2
b
1
c
A
1
y
0
5
10 mm
scale
UNIT
mm
0.93
0.46
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
A
1
2.38
2.22
Ab
2
1.1
0.9
b
1
e
1
0.89
0.71
bc
D
1
0.9
0.5
L
2
Ee
2.285
4.57
4.0
D
2
min
4.45
E
1
min
0.5
L
1
min
H
D
Lw
0.2
y
max
0.2
A
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BUK9213-30A,118
Mfr. #:
Buy BUK9213-30A,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 55A DPAK
Lifecycle:
New from this manufacturer.
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