Characteristics STPS2H100
2/12 DocID6115 Rev 8
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.56 x I
F(AV)
+ 0.045 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values -T
amb
= 25° C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(AV)
Average forward current
SMA / SMB T
L
= 130 °C = 0.5
2ASMAflat T
L
= 145 °C = 0.5
SMBflat T
L
= 150 °C = 0.5
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 2400 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/W
SMAflat 20
SMB 25
SMBflat 15
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
1µA
T
j
= 125 °C 0.4 1 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
0.79
V
T
j
= 125 °C 0.6 0.65
T
j
= 25 °C
I
F
= 4 A
0.88
T
j
= 125 °C 0.69 0.74
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
