Nexperia
PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
PHPT61002NYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 31 March 2017 4 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 115 K/W
[2] - - 50 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 30 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 6 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm
2
.
[3] Device mounted on an ceramic PCB, Al
2
O
3
, standard footprint.
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
aaa-010427
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.25
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
PHPT61002NYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 31 March 2017 5 / 15
aaa-010428
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
-1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
PHPT61002NYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 31 March 2017 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 80 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 80 V; I
E
= 0 A; T
j
= 150 °C - - 50 µA
I
CES
collector-emitter cut-off
current
V
CE
= 80 V; V
BE
= 0 V; T
amb
= 25 °C - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 7 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 1.5 V; I
C
= 500 mA; T
amb
= 25 °C [1] 100 180 -
V
CE
= 10 V; I
C
= 500 mA; T
amb
= 25 °C [1] 120 220 -
V
CE
= 5 V; I
C
= 1 A; T
amb
= 25 °C [1] 90 160 260
V
CE
= 10 V; I
C
= 1 A; T
amb
= 25 °C [1] 90 180 -
h
FE
DC current gain
V
CE
= 10 V; I
C
= 2 A; T
amb
= 25 °C [1] 20 80 -
I
C
= 0.5 A; I
B
= 50 mA; T
amb
= 25 °C - 50 75 mVV
CEsat
collector-emitter
saturation voltage
[1] - 160 300 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 2 A; I
B
= 200 mA; T
amb
= 25 °C
[1] - 80 150
I
C
= 1 A; I
B
= 50 mA; T
amb
= 25 °C [1] - 0.92 1.05 VV
BEsat
base-emitter saturation
voltage
I
C
= 2 A; I
B
= 200 mA; T
amb
= 25 °C [1] - 1.08 1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.1 A; T
amb
= 25 °C - 0.68 0.85 V
t
d
delay time - 20 - ns
t
r
rise time - 300 - ns
t
on
turn-on time - 320 - ns
t
s
storage time - 800 - ns
t
f
fall time - 420 - ns
t
off
turn-off time
V
CC
= 12.5 V; I
C
= 1 A; I
Bon
= 0.05 A;
I
Boff
= -0.05 A; T
amb
= 25 °C
- 1220 - ns
f
T
transition frequency V
CE
= 10 V; I
C
= 100 mA; f = 100 MHz;
T
amb
= 25 °C
- 140 - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 11 - pF
[1] pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]

PHPT61002NYCLHX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PHPT61002NYCLH/SOT669/LFPAK
Lifecycle:
New from this manufacturer.
Delivery:
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