Nexperia
PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
PHPT61002NYCLH All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Product data sheet 31 March 2017 8 / 15
aaa-010810
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
10
-2
10
-1
1
10
V
CEsat
(V)
10
-3
(1)(3) (2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-010812
10
-2
10
-1
1
10
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010813
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010814
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
