www.vishay.com Document Number: 91206
2 S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising form 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.24 -
Maximum Junction-to-Case (Drain) R
thJC
-0.38
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 420 - mV/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 50 μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 2.0 mA
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 13 A
b
- 0.27 0.32
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 13 A 11 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 4000 -
pF
Output Capacitance C
oss
- 340 -
Reverse Transfer Capacitance C
rss
-29-
Effective Output Capacitance C
oss
eff.
V
GS
= 0 V,
V
DS
= 0 V to 480 V
c
- 170 -
Effective Output Capacitance
(Energy Related)
C
oss
eff. (ER) - 130 -
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 21 A, V
DS
= 480 V
see fig. 7 and 15
b
- - 150
nC Gate-Source Charge Q
gs
--46
Gate-Drain Charge Q
gd
--64
Gate Resistance R
g
f = 1 MHz, open drain - 0.63 -
Turn-On Delay Time t
d(on)
V
DD
= 300 V, I
D
= 21 A,
R
g
= 1.3 , V
GS
= 10 V,
see fig. 11a and 11b
b
-20-
ns
Rise Time t
r
-58-
Turn-Off Delay Time t
d(off)
-33-
Fall Time t
f
-10-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--21
A
Pulsed Diode Forward Current
a
I
SM
--84
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 21 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 21 A
- 160 240
ns
T
J
= 125 °C, dI/dt = 100 A/μs
b
- 400 610
Body Diode Reverse Recovery Charge Q
rr
T
J
= 25 °C, I
F
= 21 A, V
GS
= 0 V
b
- 480 730
nC
T
J
= 125 °C, dI/dt = 100 A/μs
b
- 1540 2310
Reverse Recovery Time I
RRM
T
J
= 25 °C - 5.3 7.9 A
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
