OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFP21N60LPBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91206
4 S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
Fig. 7 - Typical Gate Charge vs. Gate-to-Source
Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 100 200 300 400 500 600 700
V
DS,
Drain-to-Source Voltage (V)
0
5
10
15
20
25
E
n
e
r
g
y
(
µ
J
)
020406080100120
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
I
D
= 21A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
Document Number: 91206 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
5
10
15
20
25
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
www.vishay.com Document Number: 91206
6 S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Fig. 14b - Unclamped Inductive Test Circuit
Fig. 14c - Unclamped Inductive Waveforms
Fig. 15a - Gate Charge Test Circuit
Fig. 15b - Basic Gate Charge Waveform
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 9.4A
13A
BOTTOM 21A
A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
I
AS
V
DS
t
p
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
P1-P3P4-P6P7-P9

IRFP21N60LPBF

Mfr. #:
Buy IRFP21N60LPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 600V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet