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PSMN045-80YS,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
PSMN045-80YS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Rev. 02 — 25 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --80V
I
D
drain current T
mb
=25°C; V
GS
=10V --24A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --56W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=5A;
T
j
= 100 °C; see Figure 13
--72mΩ
V
GS
=10V; I
D
=5A; T
j
= 25 °C - 37 45 mΩ
PSMN045-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 25 October 2010 2 of 15
NXP Semiconductors
PSMN045-80YS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
2. Pinning information
3. Ordering information
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=15A;
V
DS
=40V; see Figure 14;
see Figure 15
-3.1-nC
Q
G(tot)
total gate charge - 12.5 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=22A; V
sup
≤ 80 V;
R
GS
=50Ω; unclamped
--18mJ
Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT669 (LFPAK)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to
drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN045-80YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PSMN045-80YS,115

Mfr. #:
Buy PSMN045-80YS,115
Manufacturer:
Nexperia
Description:
MOSFET N-CHAN 80V 17A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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