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PSMN045-80YS,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PSMN045-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 25 October 2010 6 of 15
NXP Semiconductors
PSMN045-80YS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=-55°C73--V
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 80--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 11; see Figure 12
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 11
; see Figure 12
--4.6V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 12; see Figure 11
234V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=80V; V
GS
=0V; T
j
= 125 °C - - 50 µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A; T
j
=175°C;
see Figure 13
- - 103 mΩ
V
GS
=10V; I
D
=5A; T
j
=100°C;
see Figure 13
--72mΩ
V
GS
=10V; I
D
=5A; T
j
= 25 °C - 37 45 mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 0.73 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
=10V -9-nC
I
D
=15A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
- 12.5 - nC
Q
GS
gate-source charge - 3.8 - nC
Q
GS(th)
pre-threshold gate-source
charge
-1.9-nC
Q
GS(th-pl)
post-threshold gate-source
charge
I
D
=15A; V
DS
=40V; V
GS
=10V;
see Figure 14
-1.9-nC
Q
GD
gate-drain charge I
D
=15A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
-3.1-nC
V
GS(pl)
gate-source plateau voltage I
D
=15A; V
DS
= 40 V; see Figure 14 -4.9-V
C
iss
input capacitance V
DS
=40V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see Figure 17
- 675 - pF
C
oss
output capacitance - 79 - pF
C
rss
reverse transfer capacitance - 48 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=2.7Ω; V
GS
=10V;
R
G(ext)
=4.7Ω
-9.2-ns
t
r
rise time - 4.6 - ns
t
d(off)
turn-off delay time - 18 - ns
t
f
fall time - 4.4 - ns
PSMN045-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 25 October 2010 7 of 15
NXP Semiconductors
PSMN045-80YS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Source-drain diode
V
SD
source-drain voltage I
S
=15A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.82 1.2 V
t
rr
reverse recovery time I
S
=5A; dI
S
/dt = 100 A/µs;
V
GS
=0V; V
DS
=40V
-32-ns
Q
r
recovered charge - 42 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aad046
0
10
20
30
40
0246810
V
DS
(V)
I
D
(A)
8
6
10
5.5
5
20
V
GS
(V) =
4.5
003aad047
20
40
60
80
100
010203040
I
D
(A)
R
DSon
(mΩ)
8
5.55
6
20
10
V
GS
(V) =
003aad052
0
200
400
600
800
1000
246810
V
GS
(V)
C
(pF)
C
iss
C
rss
003aad053
0
5
10
15
20
25
30
35
0 1020304050
I
D
(A)
g
fs
(S)
PSMN045-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 25 October 2010 8 of 15
NXP Semiconductors
PSMN045-80YS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
003aad054
20
40
60
80
100
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
003aad048
0
10
20
30
40
02468
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
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PSMN045-80YS,115

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Buy PSMN045-80YS,115
Manufacturer:
Nexperia
Description:
MOSFET N-CHAN 80V 17A
Lifecycle:
New from this manufacturer.
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