NCV7519, NCV7519A
www.onsemi.com
7
ELECTRICAL CHARACTERISTICS (continued)
(4.75 V V
CCX
5.25 V, V
DD
= V
CCX
, 4.5 V V
LOAD
36 V, RSTB = V
CCX
, ENB = 0, −40°C T
J
150°C, unless otherwise specified.)
(Note 7)
Characteristic UnitMaxTypMinConditionsSymbol
FAULT DETECTION − GATX ON
DRN
X
Shorted Load Threshold
V
FLTREF
= 0.35 V
V
25
Register R2.C[11:9] = 000 (DEFAULT) 20 25 30
%
V
FLTREF
V
40
Register R2.C[11:9] = 001 35 40 45
V
50
Register R2.C[11:9] = 010 45 50 55
V
60
Register R2.C[11:9] = 011 55 60 65
V
70
Register R2.C[11:9] = 100 65 70 75
V
80
Register R2.C[11:9] = 101 75 80 85
V
90
Register R2.C[11:9] = 110 85 90 95
V
100
Register R2.C[11:9] = 111 95 100 105
DRN
X
Input Leakage Current ID
LKG
0 V V
CC1
= V
CC2
= V
DD
5.25 V,
RSTB = 0 V, V
LOAD
= V
DRNX
= 36 V
T
A
25°C
−5.0
−1.0
5.0
1.0
mA
DRN
X
Clamp Voltage V
CL
I
DRNX
= I
CL(MAX)
=10 mA; Transient
(2 ms, 1% Duty)
60 78 V
Fault Detection − GATX OFF (7.5 V V
LOAD
36 V, Register R3.D[5:0] = 1)
DRN
X
Diagnostic Current
− Proportional to V
LOAD
I
SG
Short to GND Detection, V
DRNX
= 43%V
LOAD
−81 −60 −39
mA / V
I
OL
Open Load Detection, V
DRNX
= 61%V
LOAD
2.73 4.20 5.67
mA / V
DRN
X
Fault Threshold Voltage
V
SG
Short to GND Detection 39.56 43 46.44 %V
LOAD
V
OL
Open Load Detection 56.12 61 65.88 %V
LOAD
DRN
X
Off State Bias Voltage V
CTR
46.92 51 55.08 %V
LOAD
VLOAD Undervoltage Threshold V
LDUV
VLOAD Decreasing 4.1 6.3 7.5 V
FAULT TIMERS
Channel Fault Blanking Timers
(Figure 6)
t
BL(ON)
V
DRNX
= V
LOAD
; IN
X
rising to FLTB Falling
Register R2.C[6:5] = 00
4.8 6 7.2 ms
Register R2.C[6:5] = 01 9.6 12 14.4
Register R2.C[6:5] = 10 (DEFAULT) 19.2 24 28.8
Register R2.C[6:5] = 11 28.8 48 57.6
t
BL(OFF)
V
DRNX
= 0V; IN
X
falling to FLTB Falling
Register R2.C[8:7] = 00
44 55 66 ms
Register R2.C[8:7] = 01 65 81 97
Register R2.C[8:7] = 10 (DEFAULT) 130 162 195
Register R2.C[8:7] = 11 260 325 390
Channel Fault Filter Timer
(Figure 7)
t
FF(ON)
t
FF(OFF)
2.0
44
3.0
55
4.0
66
ms
Global Fault Retry Timer
(Figure 8)
t
FR
Register R0.M[5:0] = 1 6 8 10 ms
Timer Clock f
CLK
RSTB = V
CC1
4.0 MHz
GATE DRIVER OUTPUTS
GAT
X
Output Resistance R
GATX
Output High or Low 200 350 500
W
GAT
X
High Output Current I
GSRC
V
GATX
= 0 V −26.25 −9.5 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Min/Max values are valid for the temperature range −40°C T
J
150°C unless noted otherwise. Min/Max values are guaranteed by test,
design or statistical correlation.
8. Guaranteed by design.
NCV7519, NCV7519A
www.onsemi.com
8
ELECTRICAL CHARACTERISTICS (continued)
(4.75 V V
CCX
5.25 V, V
DD
= V
CCX
, 4.5 V V
LOAD
36 V, RSTB = V
CCX
, ENB = 0, −40°C T
J
150°C, unless otherwise specified.)
(Note 7)
Characteristic UnitMaxTypMinConditionsSymbol
GATE DRIVER OUTPUTS
GAT
X
Low Output Current I
GSNK
V
GATX
= V
CC2
9.5 26.25 mA
Turn−On Propagation Delay t
P(ON)
IN
X
to GATx (Figure 4)
1.0
ms
CSB to GAT
X
(Figure 5)
Turn−Off Propagation Delay t
P(OFF)
IN
X
to GAT
X
(Figure 4)
1.0
ms
CSB to GAT
X
(Figure 5)
Output Rise Time t
R
20% to 80% of V
CC2
, C
LOAD
= 400 pF (Figure 4,
Note 8)
277
ns
Output Fall Time t
F
80% to 20% of V
CC2
, C
LOAD
= 400 pF (Figure 4,
Note 8)
277
ns
SERIAL PERIPHERAL INTERFACE (Figure 9) V
CCX
= 5.0 V, V
DD
= 3.3 V, F
SCLK
= 4.0 MHz, C
LOAD
= 200 pF
SO Supply Voltage
V
DD
3.3 V Interface 3.0 3.3 3.6 V
5 V Interface 4.5 5.0 5.5 V
SCLK Clock Period t
SCLK
250 ns
Maximum Input Capacitance C
INX
Sl, SCLK (Note 8) 12 pF
SCLK High Time t
CLKH
SCLK = 2.0 V to 2.0 V 125 ns
SCLK Low Time t
CLKL
SCLK = 0.8 V to 0.8 V 125 ns
Sl Setup Time t
SISU
Sl = 0.8 V/2.0 V to SCLK = 2.0 V (Note 8) 25 ns
Sl Hold Time t
SIHD
SCLK = 2.0 V to Sl = 0.8 V/2.0 V (Note 8) 25 ns
SO Rise Time t
SOR
(20% V
SO
to 80% V
DD
) C
LOAD
= 200 pF (Note 8)
25 50 ns
SO Fall Time t
SOF
(80% V
SO
to 20% V
DD
) C
LOAD
= 200 pF (Note 8)
50 ns
CSB Setup Time t
CSBSU
CSB = 0.8 V to SCLK = 2.0 V (Note 8) 60 ns
CSB Hold Time t
CSBHD
SCLK = 0.8 V to CSB = 2.0 V (Note 8) 75 ns
CSB to SO Time t
CS−SO
CSB = 0.8 V to SO Data Valid (Note 8) 65 125 ns
SO Delay Time SO
DLY
SCLK = 0.8 V to SO Data Valid (Note 8) 65 125 ns
Transfer Delay Time CS
DLY
CSB Rising Edge to Next Falling Edge (Note 8) 1.6
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Min/Max values are valid for the temperature range −40°C T
J
150°C unless noted otherwise. Min/Max values are guaranteed by test,
design or statistical correlation.
8. Guaranteed by design.
IN
X
GAT
X
t
P(OFF)
80%
20%
t
R
50%
50%
t
F
t
P(ON)
Figure 4. Gate Driver Timing Diagram − Parallel Input
NCV7519, NCV7519A
www.onsemi.com
9
GAT
X
t
P(OFF)
50%
CSB
50%
G
X
t
P(ON)
Figure 5. Gate Driver Timing Diagram − Serial Input
IN
X
50%
DRN
X
50%
FLTB
50%
t
BL(ON)
t
BL(OFF)
Figure 6. Blanking Timing Diagram
IN
X
SHORTED
LOAD
THRESHOLD
DRN
X
50%
FLTB
50%
t
FF(ON)
t
FF(OFF)
OPEN LOAD
THRESHOLD
Figure 7. Filter Timing Diagram
IN
X
SHORTED LOAD THRESHOLD(FLTREF)
DRN
X
t
BL(ON)
t
FF
(ON)
GAT
X
t
FR
t
FR
t
BL(ON)
t
FR
Figure 8. Fault Retry Timing Diagram

NCV7519MWTXG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers LOW SIDE PRE-DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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