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NTMSD3P303R2G

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1 Publication Order Number:
NTMSD3P303R2/D
NTMSD3P303R2
FETKY™
P−Channel Enhancement−Mode
Power MOSFET and Schottky Diode
Dual SO−8 Package
Features
• High Efficiency Components in a Single SO−8 Package
• High Density Power MOSFET with Low R
DS(on)
,
Schottky Diode with Low V
F
• Independent Pin−Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
• Less Component Placement for Board Space Savings
• SO−8 Surface Mount Package,
Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage − Continuous V
GS
"20 V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
R
JA
P
D
I
D
I
D
I
DM
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
R
JA
P
D
I
D
I
D
I
DM
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
R
JA
P
D
I
D
I
D
I
DM
62.5
2.0
−3.86
−3.10
−15
°C/W
W
A
A
A
Operating and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= −30 Vdc, V
GS
= −4.5 Vdc,
Peak I
L
= −7.5 Apk, L = 5 mH, R
G
= 25 )
E
AS
140 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board
(1in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
3. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Device Package Shipping
†
ORDERING INFORMATION
NTMSD3P303R2 SO−8 2500/Tape & Reel
A
A
S
G
C
C
D
D
(TOP VIEW)
MOSFET
−3.05 AMPERES
−30 VOLTS
0.085 W @ V
GS
= −10 V
SCHOTTKY DIODE
3.0 AMPERES
30 VOLTS
420 mV @ I
F
= 3.0 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 18
MARKING DIAGRAM &
PIN ASSIGNMENT
E3P303 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
8
AA SG
CC DD
(Note: Microdot may be in either location)
1
8
E3P303
AYWW G
G
SO−8
(Pb−Free)
2500/Tape & Reel
http://onsemi.com
1
2
3
4
8
7
6
5
NTMSD3P303R2G
NTMSD3P303R2
http://onsemi.com
2
SCHOTTKY MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
RRM
V
R
30 V
Thermal Resistance − Junction−to−Ambient (Note 5)
R
JA
197 °C/W
Thermal Resistance − Junction−to−Ambient (Note 6)
R
JA
97 °C/W
Thermal Resistance − Junction−to−Ambient (Note 7)
R
JA
62.5 °C/W
Average Forward Current (Note 7)
(Rated V
R
, T
A
= 100°C)
I
O
3.0 A
Peak Repetitive Forward Current (Note 7)
(Rated V
R
, Square Wave, 20 kHz, T
A
= 105°C)
I
FRM
6.0 A
Non−Repetitive Peak Surge Current (Note 7)
(Surge Applied at Rated Load Conditions, Half−Wave, Single Phase, 60 Hz)
I
FSM
30 A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Minimum FR−4 or G−10 PCB, Steady State.
6. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
7. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 8)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
−30
−
−
−30
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= −30 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= −30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
−1.0
−25
Adc
Gate−Body Leakage Current
(V
GS
= −20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
−1.0
−
−1.7
3.6
−2.5
−
Vdc
Static Drain−to−Source On−State Resistance
(V
GS
= −10 Vdc, I
D
= −3.05 Adc)
(V
GS
= −4.5 Vdc, I
D
= −1.5 Adc)
R
DS(on)
−
−
0.063
0.090
0.085
0.125
Forward Transconductance
(V
DS
= −15 Vdc, I
D
= −3.05 Adc)
g
FS
− 5.0 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −24 Vdc,
V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 520 750 pF
Output Capacitance
C
oss
− 170 325
Reverse Transfer Capacitance
C
rss
− 70 135
8. Handling precautions to protect against electrostatic discharge are mandatory.
NTMSD3P303R2
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 9)
Characteristic
Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS (Notes 10 & 11)
Turn−On Delay Time
(V
DD
= −24 Vdc,
I
D
= −3.05 Adc,
V
GS
= −10 Vdc,
R
G
= 6.0 )
t
d(on)
− 12 22
ns
Rise Time
t
r
− 16 30
Turn−Off Delay Time t
d(off)
− 45 80
Fall Time t
f
− 45 80
Turn−On Delay Time
(V
DD
= −24 Vdc,
I
D
= −1.5 Adc,
V
GS
= −4.5 Vdc,
R
G
= 6.0 )
t
d(on)
− 16 −
ns
Rise Time t
r
− 42 −
Turn−Off Delay Time t
d(off)
− 32 −
Fall Time t
f
− 35 −
Total Gate Charge
(V
DS
= −24 Vdc,
V
GS
= −10 Vdc,
I
D
= −3.05 Adc)
Q
tot
− 16 25
nC
Gate−Source Charge Q
gs
− 2.0 −
Gate−Drain Charge Q
gd
− 4.5 −
BODY−DRAIN DIODE RATINGS (Note 10)
Diode Forward On−Voltage (I
S
= −3.05 Adc, V
GS
= 0 Vdc)
(I
S
= −3.05 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−0.96
−0.78
−1.25
−
Vdc
Reverse Recovery Time
(I
S
= −3.05 Adc,
V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
− 34 −
ns
t
a
− 18 −
t
b
− 16 −
Reverse Recovery Stored Charge Q
RR
− 0.03 −
C
9. Handling precautions to protect against electrostatic discharge is mandatory.
10.Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%.
11. Switching characteristics are independent of operating junction temperature.
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 12)
Maximum Instantaneous Forward Voltage
V
F
T
J
= 25°C T
J
= 125°C
Volts
I
F
= 100 mAdc
I
F
= 3.0 Adc
I
F
= 6.0 Adc
0.28
0.42
0.50
0.13
0.33
0.45
Volts
Maximum Instantaneous Reverse Current
V
R
= 30 Vdc
I
R
T
J
= 25°C T
J
= 125°C
250
25
A
mA
Maximum Voltage Rate of Change V
R
= 30 Vdc dV/dt 10,000
V/s
12.Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%.
P1-P3P4-P6P7-P9

NTMSD3P303R2G

Mfr. #:
Buy NTMSD3P303R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 2.34A 8-SOIC
Lifecycle:
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