NTMSD3P303R2
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4
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
0.25
0.2
0.1
0.15
0.05
1
0.6
1.2
1.6
0
5
2
2
0.50.25
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
0
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−I
D
, DRAIN CURRENT (AMPS)
3
0.5
0.4
0.3
765
0.2
0.1
0
48
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
−I
D
, DRAIN CURRENT (AMPS)
Figure 6. On Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
13254
14325
−50 50 75250 150−25
0.75
1
3
4
V
GS
= −8 V
V
GS
= −6 V
V
GS
= −4.8 V
V
GS
= −5 V
V
GS
= −4.4 V
V
GS
= −3.6 V
V
DS
> = −10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= −10 V
V
GS
= −4.5 V
6
I
D
= −3.05 A
V
GS
= −10 V
6
0.6
0.7
V
GS
= −4.6 V
V
GS
= −10 V
I
D
= −3.05 A
T
J
= 25°C
T
J
= 25°C
1 1.25 1.5 1.75
5
2
0
1
3
4
6
2
0.5
0.4
0.3
654
0.2
0.1
0
37
0.6
0.7
1.4
0.8
V
GS
= −3.2 V
V
GS
= −3 V
V
GS
= −2.6 V
I
D
= −1.5 A
T
J
= 25°C
100 125
V
GS
= −4 V
T
J
= 25°C
V
GS
= −2.8 V
