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SIDR870ADP-T1-GE3

P1-P3P4-P6P7-P8
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
1
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Top side cooling feature provides additional
venue for thermal transfer
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• Primary side switch
•DC/DC converters
•OR-ing
• Power supplies
• Motor drive control
• Battery and load switch
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
max. (Ω) at V
GS
= 10 V 0.0066
R
DS(on)
max. (Ω) at V
GS
= 7.5 V 0.0070
R
DS(on)
max. (Ω) at V
GS
= 4.5 V 0.0105
Q
g
typ. (nC) 25.5
I
D
(A) 95
a
Configuration Single
PowerPAK
®
SO-8DC
Top View
S
1
6.15 mm
5
.15 mm
Bottom View
2
S
3
S
4
G
1
S
D
7
D
6
D
5
D
8
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK SO-8DC
Lead (Pb)-free and halogen-free SiDR870ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
100
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
95
a
A
T
C
= 70 °C 77.8
T
A
= 25 °C 21.8
b, c
T
A
= 70 °C 17.4
b, c
Pulsed drain current (t = 100 μs) I
DM
300
Continuous source-drain diode current
T
C
= 25 °C
I
S
95
a
T
A
= 25 °C 5.6
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
40
Single pulse avalanche energy E
AS
80 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
125
W
T
C
= 70 °C 80
T
A
= 25 °C 6.25
b, c
T
A
= 70 °C 4
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b
t ≤ 10 s R
thJA
15 20
°C/WMaximum junction-to-case (drain) Steady state R
thJC
0.8 1
Maximum junction-to-case (source) Steady state R
thJC
1.1 1.4
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
2
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
g. T
C
= 25 °C
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 100 - - V
V
DS
temperature coefficient ΔV
DS
/T
J
I
D
= 250 μA - 56 -
mV/°C
V
GS(th)
temperature coefficient ΔV
GS(th)
/T
J
I
D
= 250 μA - -6 -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 - 3 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 100 V, V
GS
= 0 V - - 1
μA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 70 °C - - 10
On-state drain current
a
I
D(on)
V
DS
≥ 5 V, V
GS
=10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
=10 V, I
D
= 20 A - 0.0055 0.0066
ΩV
GS
= 7.5 V, I
D
= 20 A - 0.0058 0.0070
V
GS
= 4.5 V, I
D
= 15 A - 0.0075 0.0105
Forward transconductance
a
g
fs
V
DS
= 10 V, I
D
= 20 A - 68 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
- 2866 -
pFOutput capacitance C
oss
- 719 -
Reverse transfer capacitance C
rss
-66-
Total gate charge Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A - 53.5 80
nC
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 20 A - 41 62
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 20 A
- 25.2 38
Gate-source charge Q
gs
-10-
Gate-drain charge Q
gd
- 10.6 -
Output charge Q
oss
V
DS
= 50 V, V
GS
= 0 V - 69 104
Gate resistance R
g
f = 1 MHz 0.3 1 2 Ω
Turn-on delay time t
d(on)
V
DD
= 50 V, R
L
= 2.5 Ω, I
D
≅ 20 A,
V
GEN
= 10 V, R
g
= 1 Ω
-1326
ns
Rise time t
r
-1428
Turn-off delay time t
d(off)
-3570
Fall time t
f
-918
Turn-on delay time t
d(on)
V
DD
= 50 V, R
L
= 2.5 Ω, I
D
≅ 20 A,
V
GEN
= 7.5 V, R
g
= 1 Ω
-1734
Rise time t
r
-1530
Turn-off delay time t
d(off)
-3365
Fall time t
f
-918
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 95
A
Pulse diode forward current (t
p
= 100 μs) I
SM
- - 300
Body diode voltage V
SD
I
S
= 5 A, V
GS
= 0 V - 0.74 1.1 V
Body diode reverse recovery time t
rr
I
F
= 20 A, di/dt = 100 A/μs, T
J
= 25 °C
- 54 100 ns
Body diode reverse recovery charge Q
rr
- 76 140 nC
Reverse recovery fall time t
a
-27-
ns
Reverse recovery rise time t
b
-27-
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
3
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
16
32
48
64
80
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
V
GS
= 10 V thru 5 V
V
GS
= 3 V
0.005
0.006
0.007
0.008
0.009
0.010
0 20 40 60 80 100
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 7.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 12 24 36 48 60
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 50 V
V
DS
= 75 V
V
DS
= 25 V
I
D
= 20 A
0
2
4
6
8
10
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= -55 °C
0
920
1840
2760
3680
4600
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SIDR870ADP-T1-GE3

Mfr. #:
Buy SIDR870ADP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Delivery:
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