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SIDR870ADP-T1-GE3

P1-P3P4-P6P7-P8
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
4
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
- 1.0
- 0.7
- 0.4
-
0.1
0.2
0.5
-
50 - 25 0 25 50 75 100 125 150
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.00
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 20 A
10
100
1000
10000
0
50
100
150
200
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
R
DS(on)
limited
(1)
T
A
= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1s
10 s
DC
I
DM
limited
BVDSSlimited
I
D(on)
limited
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
5
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case (Drain) Temperature (°C)
2nd line
Package limited
10
100
1000
10000
0
30
60
90
120
150
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
C
- Case (Drain) Temperature (°C)
2nd line
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
SiDR870ADP
www.vishay.com
Vishay Siliconix
S17-1000-Rev. A, 03-Jul-17
6
Document Number: 77698
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain)
Normalized Thermal Transient Impedance, Junction-to-Case (Source)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77698
.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
10
100
1000
10000
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
P1-P3P4-P6P7-P8

SIDR870ADP-T1-GE3

Mfr. #:
Buy SIDR870ADP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Delivery:
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