NTLUS4930NTAG

© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 1
1 Publication Order Number:
NTLUS4930N/D
NTLUS4930N
Power MOSFET
30 V, 6.1 A, Single NChannel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Battery Switch
Power Load Switch
DCDC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
6.1
A
T
A
= 85°C 4.4
t 5 s T
A
= 25°C 9.3
Power Dissipa-
tion (Note 1)
Steady
State
T
A
= 25°C
P
D
1.65
W
t 5 s T
A
= 25°C 3.8
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
3.8
A
T
A
= 85°C 2.8
Power Dissipation (Note 2) T
A
= 25°C P
D
0.65 W
Pulsed Drain Current
tp = 10 ms
I
DM
19 A
MOSFET Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 1) I
S
1.65 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
http://onsemi.com
NCHANNEL MOSFET
30 V
28.5 mW @ 10 V
36 mW @ 4.5 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
MOSFET
UDFN6
(mCOOL])
CASE 517BG
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
AD= Specific Device Code
M = Date Code
G = PbFree Package
AD MG
G
1
MARKING DIAGRAM
(Top View)
(*Note: Microdot may be in either location)
6.1 A
D
S
G
PIN CONNECTIONS
5.5 A
Pin 1
D
S
1
2
3
6
5
4
D
D
S
D
D
G
D
S
NTLUS4930N
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2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
θJA
75.7
°C/W
Junction-to-Ambient – t 5 s (Note 3)
R
θJA
32.9
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
191.4
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, ref to 25°C
+16 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V 10
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 1.8 2.2 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
4.4 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 6.1 A 19 28.5
mW
V
GS
= 4.5 V, I
D
= 5.5 A 27 36
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 6.0 A 16 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 15 V
476
pF
Output Capacitance C
OSS
197
Reverse Transfer Capacitance C
RSS
100
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 5.5 A
4.8
nC
Threshold Gate Charge Q
G(TH)
0.4
Gate-to-Source Charge Q
GS
1.54
Gate-to-Drain Charge Q
GD
2.15
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V;
I
D
= 5.5 A
8.7 nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 5.5 A, R
G
= 3 W
8.7
ns
Rise Time t
r
14.4
Turn-Off Delay Time t
d(OFF)
9.1
Fall Time t
f
3.3
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 6.1 A, R
G
= 3 W
4.1
ns
Rise Time t
r
12.2
Turn-Off Delay Time t
d(OFF)
11.6
Fall Time t
f
2.2
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 1.65 A
T
J
= 25°C 0.80 1.0
V
T
J
= 125°C 0.67
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUS4930N
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3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitsMaxTypMinTest ConditionSymbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 3.3 A
14.6
ns
Charge Time t
a
6.8
Discharge Time t
b
7.8
Reverse Recovery Charge Q
RR
5.4 nC
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
Device Package Shipping
NTLUS4930NTAG UDFN6
(PbFree)
3000 / Tape & Reel
NTLUS4930NTBG UDFN6
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTLUS4930NTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET UDFN6 30V 6.3A 26.3M
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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