NTLUS4930NTAG

NTLUS4930N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V) V
GS
, GATETOSOURCE VOLTAGE (V)
43210
0
2
4
6
10
14
18
20
543210
0
2
4
8
10
12
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
9.58.56.5 7.55.54.53.5
0.018
0.022
0.026
0.034
0.038
98654
0.010
0.014
0.020
0.032
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAINTOSOURCE VOLTAGE (V)
12510075502502550
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
302015105
1
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAINTO
SOURCE RESISTANCE (W)
I
DSS
, LEAKAGE (nA)
5
8
12
16
V
DS
= 5 V
6
14
20
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
0.030
I
D
= 6 A
710
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
0.024
T
J
= 25°C
V
GS
= 10 V
V
GS
= 10 V
I
D
= 6 A
150
1.0
1.5
T
J
= 150°C
T
J
= 125°C
0.042
25
2.8 V
3.0 V
3.2 V
3.4 V
3.6 V
V
GS
= 2.6 V
3.8 V
4.0 V to 10 V
16
18
V
GS
= 4.5 V
0.012
0.016
0.018
0.022
0.030
0.026
0.028
100
10
V
GS
= 0 V
T
J
= 25°C
NTLUS4930N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V)
2520151050
0
100
300
400
600
700
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
0.1
10
100
1.11.00.80.60.50.4
0
20
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
1010.10.01
0.01
0.1
10
100
C, CAPACITANCE (pF)t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
30
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
GS
= 10 V
V
DD
= 15 V
I
D
= 6 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
1
100
1
Q
G
, TOTAL GATE CHARGE (nC)
12106420
0
2
4
6
8
10
V
GS
, GATETOSOURCE VOLTAGE (V)
8
V
GS
= 10 V
V
DD
= 15 V
I
D
= 6 A
T
J
= 25°C
Q
T
Q
GS
Q
GD
10
200
500
0.7 0.9
2
4
6
8
12
14
16
18
0 V < V
GS
< 10 V
R
DS(on)
Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
NTLUS4930N
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 12. FET Thermal Response
t, TIME (s)
1E021E031E041E051E06
0
0.1
0.2
0.4
0.5
0.6
0.7
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
(NORMALIZED)
0.3
1.1
1E01 1E+00 1E+01 1E+02 1E+03
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.8
0.9
1.0

NTLUS4930NTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET UDFN6 30V 6.3A 26.3M
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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