1
Data Sheet No. PD60238 revE
IRS2153(1)D(S)PbF
SELF-OSCILLATING HALF-BRIDGE DRIVER IC
Features Product Summary
V
OFFSET
600 V Max
Duty cycle 50%
Driver source/sink
current
180 mA/260 mA typ.
V
clamp
15.4 V typ.
Integrated 600 V half-bridge gate driver
C
T
, R
T
programmable oscillator
15.4 V Zener clamp on V
CC
Micropower startup
Non-latched shutdown on C
T
pin (1/6th V
CC
)
Internal bootstrap FET
Excellent latch immunity on all inputs and outputs
+/- 50 V/ns dV/dt immunity
ESD protection on all pins
8-lead SOIC or PDIP package
Internal deadtime
Deadtime
1.1 µs typ. (IRS2153D)
0.6 µs typ. (IRS21531D)
Description
The IRS2153(1)D is based on the popular IR2153 self-
oscillating half-bridge gate driver IC using a more
advanced silicon platform, and incorporates a high
voltage half-bridge gate driver with a front end oscillator
similar to the industry standard CMOS 555 timer. HVIC
and latch immune CMOS technologies enable rugged
monolithic construction. The output driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction. Noise immunity is achieved with low
di/dt peak of the gate drivers.
Package
PDIP8 SO8
IRS2153(1)DPbF IRS2153(1)DSPbF
Typical Connection Diagram
RT
CT
COM
VCC
1
2
3
4
7
6
5
8
IRS2153(1)D
LO
VS
HO
VB
CBOOT
MHS
MLS
L
RL
RVCC
RT
CT
CVCC
+ AC Rectified Line
- AC Rectified Line
2
IRS2153(1)D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage
V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage
V
S
– 0.3 V
B
+ 0.3
V
LO
Low side output voltage -0.3
V
CC
+ 0.3
V
I
RT
R
T
pin current
-5 5 mA
V
RT
R
T
pin voltage
-0.3
V
CC
+ 0.3
V
CT
C
T
pin voltage
-0.3
V
CC
+ 0.3
V
I
CC
Supply current (Note 1) --- 20
I
OMAX
Maximum allowable current at LO and HO due to external
power transistor Miller effect.
-500 500
mA
dV
S
/dt
Allowable offset voltage slew rate -50 50 V/ns
P
D
Maximum power dissipation @ T
A
+25 ºC, 8-Pin DIP
--- 1.0
P
D
Maximum power dissipation @ T
A
+25 ºC, 8-Pin SOIC
--- 0.625
W
R
thJA
Thermal resistance, junction to ambient, 8-Pin DIP --- 85
R
thJA
Thermal resistance, junction to ambient, 8-Pin SOIC --- 128
ºC/W
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) --- 300
ºC
Note 1:
This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal
breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the V
CLAMP
specified in the Electrical Characteristics section.
3
IRS2153(1)D
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Parameter
Symbol Definition Min. Max. Units
V
BS
High side floating supply voltage
V
CC
- 0.7 V
CLAMP
V
S
Steady state side floating supply offset voltage -3.0 (Note 2) 600
V
CC
Supply voltage
V
CCUV
+
+0.1 V
V
CC CLAMP
V
I
CC
Supply current (Note 3) 5 mA
T
J
Junction temperature -40 125 ºC
Note 2:
It is recommended to avoid output switching conditions where the negative-going spikes at the V
S
node would decrease V
S
below ground by more than -5 V.
Note 3:
Enough current should be supplied to the
V
CC
pin of the IC to keep the internal 15.6 V zener diode
clamping the voltage at this pin.
Recommended Component Values
Parameter
Symbol Component Min. Max. Units
R
T
Timing resistor value 1
---
k
C
T
C
T
pin capacitor value
330 --- pF
V
BIAS
(V
CC
, V
BS
) = 14 V, V
S
=0 V and T
A
= 25 °C, CLO = CHO = 1 nF.
Frequency vs. RT
10
100
1,000
10,000
100,000
1,000,000
1,000 10,000 100,000 1,000,000
RT (Ohm)
Frequency (Hz)
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values
For further information, see Fig. 12.

IRS21531DSTRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers Self-Osc Half Bridge Drvr 1.1us
Lifecycle:
New from this manufacturer.
Delivery:
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