4
IRS2153(1)D
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 14 V, C
T
= 1 nF, V
S
=0 V and T
A
= 25 °C unless otherwise specified. The output voltage and current (V
O
and I
O
) parameters are
referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF.
Symbol Definition Min Typ Max Units
Test Conditions
Low Voltage Supply Characteristics
V
CCUV
+
Rising V
CC
undervoltage lockout threshold 10.0 11.0 12.0
V
CCUV
-
Falling V
CC
undervoltage lockout threshold 8.0 9.0 10.0
V
CCUVHYS
V
CC
undervoltage lockout hysteresis 1.6 2.0 2.4
V
I
QCCUV
Micropower startup V
CC
supply current --- 130 170
V
CC
≤ V
CCUV-
IQCC Quiescent
V
CC
supply current --- 800 1000
µA
ICC
V
CC
supply current --- 1.8 --- mA
R
T
= 36.9 kΩ
V
CC
CLAMP
V
CC
zener clamp voltage 14.4 15.4 16.8 V I
CC
= 5 mA
Floating Supply Characteristics
I
QBS
Quiescent V
BS
supply current --- 60 80 µA
V
BSUV+
V
BS
supply undervoltage positive going
threshold
8.0 9.0 9.5
V
BSUV-
V
BS
supply undervoltage negative going
threshold
7.0 8.0 9.0
V
I
LK
Offset supply leakage current --- --- 50
µA
V
B
= V
S
= 600 V
Oscillator I/O Characteristics
18.4 19.0 19.6
R
T
= 36.5 kΩ
f
OSC
Oscillator frequency
88 93 100
kHz
R
T
= 7.15 kΩ
d R
T
pin duty cycle --- 50 --- %
f
o
< 100 kHz
I
CT
C
T
pin current ---
0.02
1.0
µA
I
CTUV
UV-mode C
T
pin pulldown current 0.20 0.30 0.6 mA
V
CC
= 7 V
V
CT+
Upper C
T
ramp voltage threshold --- 9.32 ---
V
CT-
Lower C
T
ramp voltage threshold --- 4.66 ---
V
CTSD
C
T
voltage shutdown threshold 2.2 2.3 2.4
V
--- 10 50 I
RT = -100 µA
V
RT+
High-level R
T
output voltage, V
CC
- V
RT
--- 100 300 I
RT = -1 mA
--- 10 50 I
RT = 100 µA
V
RT-
Low-level R
T
output voltage
--- 100 300 I
RT = 1 mA
V
RTUV
UV-mode R
T
output voltage
--- 0 100
V
CC
≤ V
CCUV-
--- 10 50
I
RT = -100 µA,
V
CT
= 0 V
V
RTSD
SD-mode R
T
output voltage, V
CC
- V
RT
--- 100 300
mV
I
RT = -1 mA,
V
CT
= 0 V