August 2011 Doc ID 12596 Rev 3 1/25
25
PD55015-E
RF power transistor from the LdmoST plastic family
of N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
=15 W with 14dB gain @ 500 MHz/12.5 V
Description
The PD55015-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. The PD55015-E
boasts the excellent gain, linearity and reliability
thanks to ST’s latest LDMOS technology mounted
in the first true SMD plastic RF power package,
the PowerSO-10RF.
The PD55015-E’s superior linearity performance
makes it an ideal solution for car mobile radios.
The PowerSO-10RF plastic package is designed
for high reliability, and is the first JEDEC-
approved, high power SMD package from ST. It
has been optimized for RF requirements and
offers excellent RF performance and ease of
assembly.
Mounting recommendations are provided in
application note AN1294, available on
www.st.com.
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order code Package Packing
PD55015-E PowerSO-10RF (formed lead) Tube
PD55015S-E PowerSO-10RF (straight lead) Tube
PD55015TR-E PowerSO-10RF (formed lead) Tape and reel
PD55015STR-E PowerSO-10RF (straight lead) Tape and reel
www.st.com
