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PD55015TR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
Electrical characteristics PD55015-E
4/25 Doc ID 12596 Rev 3
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 Moisture sensitivity level
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V
DS
= 28 V 1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 150 mA 2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 2.5 A 0.8 V
g
FS
V
DS
= 10 V I
D
= 2.5 A 2.0 2.5 mho
C
ISS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 89 pF
C
OSS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 60 pF
C
RSS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 6.5 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P
1dB
V
DD
= 12.5 V, I
DQ
= 150 mA f = 500 MHz 15 W
G
P
V
DD
= 12.5 V, I
DQ
= 150 mA, P
OUT
= 15 W, f = 500 MHz 12 14 dB
n
D
V
DD
= 12.5 V, I
DQ
= 150 mA, P
OUT
= 15 W, f = 500 MHz 50 55 %
Load
mismatch
V
DD
= 15.5 V, I
DQ
= 150 mA, P
OUT
= 15 W, f = 500 MHz
All phase angles
20:1 VSWR
Table 6. Moisture sensitivity level
Test methodology Rating
J-STD-020B MSL 3
PD55015-E Impedance
Doc ID 12596 Rev 3 5/25
3 Impedance
Figure 2. Current conventions
Table 7. Impedance data
PD55015 PD55015S
Freq. (MHz) Z
IN
(Ω)Z
DL
(Ω)Freq. (MHz)Z
IN
(Ω)Z
DL
(Ω)
480 1.58 + j 0.56 1.27 - j 1.36 480 1.30 - j 0.54 1.18 + j 0.04
500 1.53 + j 0.77 1.51 - j 1.81 500 1.26 - j 0.30 1.32 - j 0.22
520 1.70 + j 1.17 1.44 - j 2.13 520 1.34 - j 0.11 1.46 - j 0.22
876 0.33 + j 0.44 1.36 - j 0.21
900 0.33 + j 0.70 1.29 - j 1.03
915 0.33 + j 0.87 1.27 - j 0.37
Typical performance PD55015-E
6/25 Doc ID 12596 Rev 3
4 Typical performance
Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate voltage
Figure 5. Gate-source voltage vs. case
temperature
Figure 6. Maximum safe operating area
0 5 10 15 20 25 30
VDS (V)
1
10
100
1000
C (pF)
Ciss
Coss
Crss
f=1 MHz
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
Id, DRAIN CURRENT (A)
V
DS
= 10 V
-25 0 25 50 75
Tc, CASE TEMPERATURE (°C)
0.96
0.98
1
1.02
1.04
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
ID = .25 A
I
D
= 1A
ID = 1.5 A
I
D
= 2A
I
D
= 3A
VDS = 10 V
0.1
1
10
110100
TC = 100 °C TC = 70 °C TC = 25 °C
Id, DRAIN CURRENT (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
TJ = +165°C
AM10118V1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

PD55015TR-E

Mfr. #:
Buy PD55015TR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST
Lifecycle:
New from this manufacturer.
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