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NSVJ6904DSB6T1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. P1
1 Publication Order Number:
NSVJ6904DSB6/D
NSVJ6904DSB6
Advance Information
N-Channel JFET
−25 V, 20 to 40 mA, 40 mS, Dual
The NSVJ6904DSB6 is a composite type of JFET designed for
compact size and high efficiency which can achieve high gain
performance. This AEC−Q101 qualified and PPAP capable device is
suited for automotive applications.
Features
• Large | yfs |
• Small Ciss
• Ultralow Noise Figure
• CPH6 Package is Pin−Compatible with SC−74
• AEC−Q101 Qualified and PPAP Capable
• Mounting Area is Greatly Reduced by Incorporating Two JFETs of
the NSVJ3910SB3 in One Package of CPH6 Compared with Using
Two Separate Packages
Typical Applications
• AM Tuner RF Amplification
• Low Noise Amplifier
Specifications
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C)
Parameter
Symbo
l
Value Unit
Drain to Source Voltage V
DSX
25 V
Gate to Drain Voltage V
GDS
−25 V
Gate Current I
G
10 mA
Drain Current I
D
50 mA
Allowable Power Dissipation 1 unit P
D
400 mW
Total Power Dissipation P
T
700 mW
Operating Junction and Storage Temperature T
J,
T
Stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
MARKING
DIAGRAM
www.onsemi.com
V
DSS
R
DS
(on) MAX I
D
MAX
60 V
78 mW @ 10 V
4.5 A
104 mW @ 4.5 V
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1 : Drain 1
2 : NC
3 : Drain 2
4 : Gate 2
5 : Source 1 / Source 2
6 : Gate 1
ELECTRICAL CONNECTION
N−Channel
CASE 318BD
CPH6
1P
LOT No
2
1
3
5
6
4
1 23
654
NSVJ6904DSB6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, (Note 1))
Characteristic
Symbol Conditions Min Typ Max Unit
Gate to Drain Breakdown Voltage V
(BR)GDS
I
G
= −10 mA, V
DS
= 0 V
−25 − − V
Gate to Source Leakage Current I
GSS
V
GS
= −10 V, V
DS
= 0 V − − −1.0 nA
Cutoff Voltage V
GS(off)
V
DS
= 5 V, I
D
= 100 mA
−0.6 −1.2 −1.8 V
Zero−Gate Voltage Drain Current I
DSS
V
DS
= 5 V, V
GS
= 0 V 20 − 40 mA
Forward Transfer Admittance
| yfs |
V
DS
= 5 V, V
GS
= 0 V, f = 1 kHz 30 40 − mS
Input Capacitance Ciss
V
DS
= 5 V, V
GS
= 0 V, f = 1 MHz
− 6.0 − pF
Reverse Transfer Capacitance Crss − 2.3 − pF
Noise Figure NF V
DS
= 5 V, V
GS
= 0 V, f = 100 MHz − 2.1 2.8 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The specifications shown above are for each individual JFET.
NSVJ6904DSB6
www.onsemi.com
3
CHARACTERISTICS
0
10
15
20
25
30
5
1.0
23 57
10
23 57
100
0 2.01.0 1.50.5
V
GS
= 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
V
GS
= 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.0 V
Figure 1. I
D
− V
DS
DRAIN−TO−SOURCE VOLTAGE, V
DS
− V
DRAIN CURRENT, I
D
−
mA
Figure 2. I
D
− V
DS
DRAIN−TO−SOURCE VOLTAGE, V
DS
− V
DRAIN CURRENT, I
D
−
mA
0
10
15
20
25
30
5
35
40
0246810
Figure 3. I
D
− V
GS
GATE−TO−SOURCE VOLTAGE, V
GS
− V
DRAIN CURRENT, I
D
−
mA
Figure 4. I
D
− V
GS
GATE−TO−SOURCE VOLTAGE, V
GS
− V
DRAIN CURRENT, I
D
−
mA
0
10
15
20
25
30
5
35
40
45
50
0
10
15
20
25
30
5
35
40
45
50
−2.0 0.5−1.0 −0.5−1.5 0−2.0 0.5−1.0 −0.5−1.5 0
V
DS
= 5 V
V
DS
= 5 V
Ta = −25°C
75°C
25°C
30 mA
20 mA
I
DSS
= 40 mA
Figure 5. | yfs | − I
D
DRAIN CURRENT, I
D
− mA
FORWARD TRANSFER ADMITTANCE, | yfs | − mS
Figure 6. | yfs | − I
DSS
DRAIN CURRENT, I
DSS
− mA
FORWARD TRANSFER ADMITTANCE, | yfs | − mS
V
DS
= 5 V
f = 1 kHz
I
DSS
= 30 mA
V
DS
= 5 V
V
GS
= 0 V
f = 1 kHz
1.0
3
5
7
10
2
2
3
5
7
100
10
23 57
100
10
2
3
5
7
100
P1-P3P4-P6P7-P7

NSVJ6904DSB6T1G

Mfr. #:
Buy NSVJ6904DSB6T1G
Manufacturer:
ON Semiconductor
Description:
JFET JFET -25V, 20 TO 40MA DUA
Lifecycle:
New from this manufacturer.
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