NSVJ6904DSB6T1G

NSVJ6904DSB6
www.onsemi.com
4
CHARACTERISTICS
Figure 7. V
GS
(off) I
DSS
DRAIN CURRENT, I
DSS
mA
CUTOFF VOLTAGE, V
GS
(off) V
Figure 8. Ciss V
GDS
DRAINTOSOURCE VOLTAGE, V
DS
V
INPUT CAPACITANCE, Ciss pF
V
DS
= 5 V
I
D
= 100 mA
V
GS
= 0 V
f = 1 MHz
10
23 57
100
0.1
3
5
7
1.0
2
2
3
5
7
10
1.0
2
3
5
7
10
1.0
23 57
10
23 57
100
Figure 9. Crss V
DS
DRAINTOSOURCE VOLTAGE, V
DS
V
REVERSE TRANSFER CAPACITANCE, Crss pF
Figure 10. P
D
, P
T
Ta
AMBIENT TEMPERATURE, Ta °C
ALLOWABLE POWER DISSIPATION, P
D
, P
T
mW
V
GS
= 0 V
f = 1 MHz
P
T
1 unit
20 40 60 80 100 120 140 160
0
100
200
300
400
500
600
700
800
0
1.0
2
3
5
7
10
1.0
23 57
10
23 57
100
ORDERING INFORMATION
Device Order Number Specific Device Marking Package Type Shipping
NSVJ6904DSB6T1G 1P CPH6
(PbFree / Halogen Free)
3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
http://onsemi.com
1
© Semiconductor Components Industries, LLC, 2002
October, 2002 Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON65440E
ON SEMICONDUCTOR STANDARD
CPH6
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY in red.
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON65440E
PAGE 2 OF 2
ISSUE REVISION DATE
O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC00000733 TO ON
SEMICONDUCTOR. REQ. BY D. TRUHITTE.
30 NOV 2011
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. O
Case Outline Number:
318BD
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NSVJ6904DSB6T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
JFET JFET -25V, 20 TO 40MA DUA
Lifecycle:
New from this manufacturer.
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