STB200N4F3, STP200N4F3 Electrical ratings
Doc ID 13302 Rev 3 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 40 V
V
GS
Gate-source voltage ±20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25 °C 120 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C 120 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 480 A
P
TOT
Total dissipation at T
C
= 25 °C 300 W
Derating factor 2.0 W/°C
E
AS
(3)
3. Starting Tj = 25°C, I
D
= 60A, V
DD
= 25V
Single pulse avalanche energy 862 mJ
dv/dt
(4)
4. I
SD
≤ 60A, di/dt ≤ 440 A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
Peak diode recovery voltage slope 4.2 V/ns
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 D²PAK
R
thJC
Thermal resistance junction-case max 0.50 °C/W
R
thJ-PCB
(1)
1. When mounted on FR-4 board, 1inch² 2 oz. Cu.
Thermal resistance junction-pcb max 35 °C/W
R
thJA
Thermal resistance junction-ambient max 62.5 °C/W
Obsolete Product(s) - Obsolete Product(s)
