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STP200N4F3

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STB200N4F3, STP200N4F3
4/14 Doc ID 13302 Rev 3
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 40 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
10
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 60 A
D²PAK
TO-220
0.0025
0.0030
0.0031
0.0035
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 10 V, I
D
= 80 A - 200 - S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
5100
1270
37
-
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 20 V, I
D
= 120 A
V
GS
= 10 V
(see Figure 14)
-
75
23
17
-
nC
nC
nC
Obsolete Product(s) - Obsolete Product(s)
STB200N4F3, STP200N4F3 Electrical characteristics
Doc ID 13302 Rev 3 5/14
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 20 V, I
D
= 60 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
-
19
180
-
ns
ns
t
d(off)
t
f
Off-voltage rise time
Fall time
V
DD
= 20 V, I
D
= 60 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
-
90
65
-
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
Source-drain current
Source-drain current (pulsed)
-
120
480
A
A
V
SD
Forward on voltage I
SD
= 120 A, V
GS
= 0 - 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 120 A, di/dt = 100
A/µs, V
DD
= 20 V,
T
J
= 150 °C
(see Figure 18)
-
67
130
4
ns
nC
A
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics STB200N4F3, STP200N4F3
6/14 Doc ID 13302 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs. temperature Figure 7. Static drain-source on resistance
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P14

STP200N4F3

Mfr. #:
Buy STP200N4F3
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 40Volt 120Amp
Lifecycle:
New from this manufacturer.
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