Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 6
1 Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board
space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT–363
CASE 419B
STYLE 1
http://onsemi.com
xx = Device Marking
= (See Page 2)
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)(2)(3)
(4) (5) (6)
1
2
3
6
5
4
xx
MUN5311DW1T1 Series
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2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5311DW1T1 SOT–363 11 10 10 3000/Tape & Reel
MUN5312DW1T1 SOT–363 12 22 22 3000/Tape & Reel
MUN5313DW1T1 SOT–363 13 47 47 3000/Tape & Reel
MUN5314DW1T1 SOT–363 14 10 47 3000/Tape & Reel
MUN5315DW1T1 (Note 3.) SOT–363 15 10 3000/Tape & Reel
MUN5316DW1T1 (Note 3.) SOT–363 16 4.7 3000/Tape & Reel
MUN5330DW1T1 (Note 3.) SOT–363 30 1.0 1.0 3000/Tape & Reel
MUN5331DW1T1 (Note 3.) SOT–363 31 2.2 2.2 3000/Tape & Reel
MUN5332DW1T1 (Note 3.) SOT–363 32 4.7 4.7 3000/Tape & Reel
MUN5333DW1T1 (Note 3.) SOT–363 33 4.7 47 3000/Tape & Reel
MUN5334DW1T1 (Note 3.) SOT–363 34 22 47 3000/Tape & Reel
MUN5335DW1T1 (Note 3.) SOT–363 35 2.2 47 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
Emitter-Base Cutoff Current MUN5311DW1T1
(V
EB
= 6.0 V, I
C
= 0) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0) V
(BR)CBO
50 Vdc
Collector-Emitter Breakdown Voltage (Note 4.) (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN5311DW1T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain MUN5311DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k) MUN5313DW1T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k) MUN5330DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
V
OH
4.9 Vdc
Input Resistor MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2 0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

MUN5313DW1T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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